- 您现在的位置：买卖IC网 > PDF目录155751 > 2N3700DCSMG4 (SEMELAB LTD) 1000 mA, 80 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2N3700DCSMG4 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 80 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | HERMETIC SEALED, CERAMIC, LCC2-6 |
| 文件页数： | 1/2页 |
| 文件大小： | 18K |
| 代理商： | 2N3700DCSMG4 |
2N3700DCSM
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 5309
Issue 1
HIGH VOLTAGE, MEDIUM POWER, NPN
DUAL TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
DUAL SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
HIGH VOLTAGE
APPLICATIONS:
Dual Hermetically sealed surface mount version
of the popular 2N3700 for high reliability/ space
applications requiring small size and low weight
devices.
VCBO
Collector – Base Voltage
VCEO
Collector – Emitter Voltage (IB = 0)
VEBO
Emitter – Base Voltage (IB = 0)
IC
Collector Current
PD
Per Device Dissipation
PD
Total Device Dissipation
PD
Derate above 25°C (Per Device)
(Total)
Rja
Thermal Resistance Junction to Ambient
Tstg
Storage Temperature
140V
80V
7V
1A
350mW
525mW
2mW / °C
3mW/°C
240°C/W
–65 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
LCC2 PACKAGE
Underside View
PAD 1 – Collector 1
PAD 2 – Base 1
PAD 3 – Base 2
PAD 4 – Collector 2
PAD 5 – Emitter 2
PAD 6 – Emitter 1
2N3700DCSM
A
2
1
3
4
5
6
6.22 ± 0.13
(0.245 ± 0.005)
2
.54
±
0.
13
(0
.10
±
0.
005)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
1.27 ± 0.13
(0.05 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
4.
32
±
0.
13
(0
.170
±
0.
005)
0
.64
±
0.
08
(0
.025
±
0.
003)
0.23
(0.009)
rad.
A =
相关PDF资料 |
PDF描述 |
|---|---|
| 2N3716 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N3810DCSM.MOD | 50 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N3879R1 | 7 A, 75 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N4119A | N-Channel JFETs |
| 2N4123 | 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3700E4 | 制造商:Microsemi Corporation 功能描述: |
| 2N3700HR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Hi-Rel 80 V - 1 A NPN bipolar transistor |
| 2N3700JAN | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-18 |
| 2N3700JANS | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-18 |
| 2N3700JANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-18 |
发布紧急采购，3分钟左右您将得到回复。