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参数资料
| 型号： | 2N3700UB |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | HERMETIC SEALED, CERSOT-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 235K |
| 代理商： | 2N3700UB |
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. G
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3700UB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3700UBJ)
JANTX level (2N3700UBJX)
JANTXV level (2N3700UBJV)
JANS level (2N3700UBJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power
NPN silicon transistor
Features
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 4500
Reference document:
MIL-PRF-19500/391
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
80
Volts
Collector-Base Voltage
VCBO
140
Volts
Emitter-Base Voltage
VEBO
7
Volts
Collector Current, Continuous
IC
1
A
Power Dissipation, TA = 25
OC
Derate linearly above 37.5OC
PT
0.5
3.08
W
mW/
°C
Power Dissipation, TC = 25
OC
Derate linearly above 25OC
PT
1.16
6.63
W
mW/
°C
Thermal Resistance
RθJA
325
°C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG
-65 to +200
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3700UBJ | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 80V 1A 3-Pin CSOT-23 |
| 2N3700UBJAN | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 80V 1A 3-Pin CSOT-23 |
| 2N3700UBJANS | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 80V 1A 3-Pin CSOT-23 |
| 2N3700UBJANSR | 制造商:Microsemi Corporation 功能描述: |
| 2N3700UBJANTX | 制造商:Microsemi Corporation 功能描述: |
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