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参数资料
| 型号： | 2N3710 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 218K |
| 代理商： | 2N3710 |
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2N3710 Information
Category Transistors
Class Transistors; Bipolar; Si NPN Low-Power
Type Bipolar; Si NPN Low-Power
2N3710 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 30
V(BR)CBO (V) : 30
I(C) Max. (A) : 30m
Absolute Max. Power Diss. (W) : 360m
Maximum Operating Temp (шC) : 150ю
I(CBO) Max. (A) : 100nШ
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 90
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 1.0m
@V(CE) (V) (Test Condition) : 5.0
f(T) Min. (Hz) Transition Freq : 100M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
C(obo) (Max) (F) :
@V(CB) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Package Style : TO-92
Mounting Style : T
Description :
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Page 1 of 2
2N3710 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integra...
12-Apr-2011
http://www.americanmicrosemi.com/information/spec/?ss_pn=2N3710
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PDF描述 |
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| 2N3714 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N3715 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N3722 | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3725A | 1200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3711 | 功能描述:两极晶体管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3712 | 制造商:SSI 功能描述: |
| 2N3713 | 功能描述:两极晶体管 - BJT NPN GP Power RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3713 LEADFREE | 功能描述:两极晶体管 - BJT NPN GP Power RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3713_12 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:EPITAXIAL-BASE TRANSISTORS |
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