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参数资料
| 型号： | 2N3713 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 263K |
| 代理商： | 2N3713 |
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2N3713 Information
Category Transistors
Class Transistors; Bipolar; Si NPN Power
Type Transistors; Bipolar; Si NPN Power
2N3713 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 60
V(BR)CBO (V) : 80
I(C) Max. (A) : 10
Absolute Max. Power Diss. (W) : 150
Maximum Operating Temp (шC) : 175х
I(CBO) Max. (A) : 1.0mч
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 25
h(FE) Max. Current gain. : 75
@I(C) (A) (Test Condition) : 1.0
@V(CE) (V) (Test Condition) : 2.0
f(T) Min. (Hz) Transition Freq : 30k
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
t(d) Max. (s) Delay time. :
t(r) Max. (s) Rise time : 450nВ
t(on) Max. (s) On time. :
t(s) Max. (s) Storage time. : 300nВ
t(f) Max. (s) Fall time. : 400nВ
t(off) Max. (s) Off time :
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AMS is a leading
manufacturer of commercial
electronic components,
specializing in parts
discontinued by leading
manufacturers. Not only can
we create and test custom
transistors and diodes for
your special applications, but
with our outstanding
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Did you Know...
2N3713 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio...
http://www.americanmicrosemi.com/information/spec/?ss_pn=2N3713
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11/7/2009 2:02 AM
相关PDF资料 |
PDF描述 |
|---|---|
| 2N3715R1 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N3715SMDR4 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB |
| 2N3715 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N3716XR1 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N3716X | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3713 LEADFREE | 功能描述:两极晶体管 - BJT NPN GP Power RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3713_12 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:EPITAXIAL-BASE TRANSISTORS |
| 2N3713SMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N3714 | 功能描述:两极晶体管 - BJT NPN GP Power RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3714SMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
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