- 您现在的位置：买卖IC网 > PDF目录30421 > 2N3720.MODR1 (SEMELAB LTD) 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-205AD PDF资料下载
参数资料
| 型号： | 2N3720.MODR1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 封装： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 33K |
| 代理商： | 2N3720.MODR1 |
2N3720
VCBO
Collector – Base Voltage
VCEO
Collector – Emitter Voltage (IB = 0)
VEBO
Emitter – Base Voltage (IB = 0)
IC
Collector Current
IC(cont)
Collector Current Continuous
PD
Total Device Dissipation TA = 25 °C
Derate above 25°C
PD
Total Device Dissipation TC = 25 °C
Derate above 25°C
Tstg
Storage Temperature
RθJA
Thermal Resistance Junction to Ambient
RθJC
Thermal Resistance Junction to Case
-60V
-4V
-1A
-3A
1W
5.71mW / °C
6W
34.3mW / °C
–65 to 200°C
175°C/W
29°C/W
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PNP SILICON TRANSISTOR
FEATURES
High Current Gain Bandwidth Product
Hermetic TO39 Package
Full Screening Options Available
MECHANICAL DATA
Dimensions in mm (inches)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
TO–39 (TO205AD)
PIN 1 – Emitter
Underside View
PIN 2 – Base
PIN 3 – Collector
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N3720 | Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3720 | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3723 | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3723 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3724 | 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3721 | 制造商:General Electric Company 功能描述: |
| 2N3722 | 制造商:CENTRAL SEMICONDUCTOR 功能描述:2N Series 60 V 100 mA NPN Through Hole Small Signal Transistor - TO-39 |
| 2N3723 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5 |
| 2N3724 | 功能描述:两极晶体管 - BJT Pb Sml Signal Trans General purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3724A | 功能描述:两极晶体管 - BJT NPN Fast SW SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。