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| 型号： | 2N3725.MOD |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 25K |
| 代理商： | 2N3725.MOD |
2N3725
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 4303
Issue 1
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
CB = 60 V
1.7
I
CBO
Collector Cutoff Current (I
E = 0)
V
CB = 60 V
T
amb = 100 `C
120
A
V
(BR)CBO
Collector-Base Breakdown Voltage (IE = 0)
I
C = 10 A
80
V
(BR)CES
Collector-Emitter Breakdown
Voltage (V
BE = 0)
I
C = 10 A
80
V
(BR)CEO*
Collector-Emitter Breakdown Voltage (I
B = 0)
I
C = 10 mA
50
V
(BR)EBO
Emitter-Base Breakdown Voltage (I
C = 0)
I
E = 10 A
6
V
I
C = 10 mA
I
B = 1 mA
0.19
0.25
I
C = 100 mA
I
B = 10 mA
0.21
0.26
I
C = 300 mA
I
B = 30 mA
0.31
0.4
I
C = 500 mA
I
B = 50 mA
0.4
0.52
I
C = 800 mA
I
B = 80 mA
0.5
0.8
V
CE(sat ) *
Collector-Emitter Saturation Voltage
I
C = 1000 mA
I
B = 100 mA
0.6
0.95
V
I
C = 10 mA
I
B = 1 mA
0.64
0.76
I
C = 100 mA
I
B = 10 mA
0.75
0.86
I
C = 300 mA
I
B = 30 mA
0.89
1.1
I
C = 500 mA
I
B = 50 mA
0.9
1.2
I
C = 800 mA
I
B = 80 mA
1.0
1.5
V
BE(sat ) *
Base-Emitter Saturation Voltage
I
C = 1000 mA
I
B = 100 mA
1.1
1.7
V
I
C = 10 mA
V
CE = 1 V
30
60
I
C = 100 mA
V
CE = 1 V
60
90
150
I
C = 300 mA
V
CE = 1 V
40
60
I
C = 1000 mA
V
CE = 5 V
25
65
I
C = 800 mA
V
CE = 2 V
20
40
hFE*
DC Current Gain
I
C = 500 mA
V
CE = 1 V
35
hfe
High Frequency Current Gain (f = 100Mhz)
I
C = 50 mA
V
CE = 10 V
3
C
CBO
Collector-Base Capacitance (f = 1Mhz)
I
E = 0
V
CB = 10 V
10
pF
C
EBO
Emitter-Base Capacitance (f = 1Mhz)
I
C = 0
V
CB = 0.5 V
55
pF
ton
Turn-on Time
I
C = 500 mA
I
B = 50 mA
V
CC = 30 V
35
ns
toff
Turn off Time
I
C = 500 mA
V
CC = 30 V
I
B1 = – IB2 = 50 mA
60
ns
* Pulsed : pulse duration = 300s, duty cycle = 1%
THERMAL DATA (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
R th j-case
Thermal Resistance Junction-Case
50
°C/W
R
th j-amb
Thermal Resistance Junction-Ambient
220
°C/W
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相关代理商/技术参数 |
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|---|---|
| 2N3725UB | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR UB LAW - Gel-pak, waffle pack, wafer, diced wafer on film |
| 2N3726 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Dual Transistors |
| 2N3727 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:PNP DUAL SILICON TRANSISTOR |
| 2N3728 | 制造商:SCA 功能描述: 制造商:SSI 功能描述: |
| 2N3729 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 30V V(BR)CEO | TO-77 |
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