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参数资料
| 型号： | 2N3725 |
| 厂商： | 意法半导体 |
| 英文描述： | High-Voltage, High-Current Switch(硅平面外延工艺NPN晶体管) |
| 中文描述： | 高电压，大电流开关（硅平面外延工艺npn型晶体管） |
| 文件页数： | 2/6页 |
| 文件大小： | 87K |
| 代理商： | 2N3725 |
ELECTRICAL CHARACTERISTICS
(T
amb
= 25
°
C unless otherwise specified)
Symbol
I
CBO
Parameter
Test Conditions
V
CB
= 60 V
V
CB
= 60 V
Min.
Typ.
Max.
1.7
120
Unit
μ
A
μ
A
Collector Cutoff Current (I
E
= 0)
T
amb
= 100
°
C
V(
BR)CBO
Collector-base Breakdown
Voltage (I
E
= 0)
Collector-emitter Breakdown
Voltage (V
BE
= 0)
Collector-emitter Breakdown
Voltage (I
B
= 0)
Emitter-base Breakdown
Voltage (I
C
= 0)
Collector-emitter Saturation
Voltage
I
C
= 10
μ
A
80
V
V
(BR)CES
I
C
= 10
μ
A
80
V
V(
BR)CEO
*
I
C
= 10 mA
50
V
V(
BR)EBO
I
E
= 10
μ
A
6
V
V
CE(sat )
*
I
C
= 10 mA
I
C
= 100 mA
I
C
= 300 mA
I
C
= 500 mA
I
C
= 800 mA
I
C
= 1000 mA
I
C
= 10 mA
I
C
= 100 mA
I
C
= 300 mA
I
C
= 500 mA
I
C
= 800 mA
I
C
= 1000 mA
I
C
= 10 mA
I
C
= 100 mA
I
C
= 300 mA
I
C
= 1000 mA
I
C
= 800 mA
I
C
= 500 mA
I
C
= 50 mA
f = 100 MHz
I
E
= 0
f = 1 MHz
I
C
= 0
f = 1 MHz
I
C
= 500 mA
I
B
= 50 mA
I
C
= 500 mA
I
B1
= – I
B2
=
I
B
= 1 mA
I
B
= 10 mA
I
B
= 30 mA
I
B
= 50 mA
I
B
= 80 mA
I
B
= 100 mA
I
B
= 1 mA
I
B
= 10 mA
I
B
= 30 mA
I
B
= 50 mA
I
B
= 80 mA
I
B
= 100 mA
V
CE
= 1 V
V
CE
= 1 V
V
CE
= 1 V
V
CE
= 5 V
V
CE
= 2 V
V
CE
= 1 V
V
CE
= 10 V
0.19
0.21
0.31
0.4
0.5
0.6
0.64
0.75
0.89
0.25
0.26
0.4
0.52
0.8
0.95
0.76
0.86
1.1
1.2
1.5
1.7
V
V
V
V
V
V
V
V
V
V
V
V
V
BE(sat )
*
Base-emitter Saturation Voltage
0.9
1.0
1.1
60
90
60
65
40
h
FE
*
DC Current Gain
30
60
40
25
20
35
150
h
fe
High Frequency Current Gain
3
C
CBO
Collector-base Capacitance
V
CB
= 10 V
10
pF
C
EBO
Emitter-base Capacitance
V
CB
= 0.5 V
55
pF
t
on
**
Turn-on Time
V
CC
= 30 V
35
ns
t
off
**
Turn off Time
V
CC
= 30 V
50 mA
60
ns
* Pulsed : pulse duration = 300
μ
s, duty cycle = 1 %.
** See test circuit.
THERMAL DATA
R
th j-case
R
th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
50
220
°
C/W
°
C/W
2N3725
2/6
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