- 您现在的位置：买卖IC网 > PDF目录33236 > 2N3739.MODR1 (SEMELAB LTD) 0.25 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-213AA PDF资料下载
参数资料
| 型号： | 2N3739.MODR1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.25 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 封装： | HERMETIC SEALED, METAL, TO-66, 2 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 11K |
| 代理商： | 2N3739.MODR1 |
2N3739
Bipolar NPN Device.
V
CEO =
300V
I
C = 0.25A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
300
V
I
C(CONT)
0.25
A
h
FE
@ 10/0.1 (V
CE / IC)
40
200
-
f
t
10M
Hz
P
D
20
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
TO66 (TO213AA)
PINOUTS
1 – Base
2 – Emitter
Case – Collector
Bipolar NPN Device in a
Hermetically sealed TO66
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
24.13
(0.95)
24.63
(0.97)
14.48
(0.570)
14.99
(0.590)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
0.71
(0.028)
0.86
(0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94
(0.470)
12.70
(0.500)
1
2
相关PDF资料 |
PDF描述 |
|---|---|
| 2N3739E1 | 0.25 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N3739 | 0.2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N3739 | 0.25 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N3739 | 0.25 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N3738 | 0.25 A, 225 V, NPN, Si, POWER TRANSISTOR, TO-66 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3739SX | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
| 2N3740 | 功能描述:两极晶体管 - BJT Leaded Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3740_1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:PNP POWER SILICON TRANSISTOR |
| 2N3740_11 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:PNP SILICON POWER TRANSISTOR |
| 2N3740_2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:PNP POWER SILICON TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。