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参数资料
| 型号： | 2N3767SMD05R4 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
| 封装： | CERAMIC, SMD0.5, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 17K |
| 代理商： | 2N3767SMD05R4 |
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 3781
Issue 3
2N3767SMD05
VCBO
Collector– Base Voltage (IE = 0)
VCEO
Collector– Emitter Voltage (IB = 0)
VEBO
Emiiter– Base Voltage (IB = 0)
IB
Base Current
IC
Collector Current
TJ ,TSTG
Operating and Storage Junction Temperature Range
PD
Total Device Dissipation @ TC = 25°C
Derate above 25°C
100V
80V
6V
2A
4A
–55 to +150°C
25W
5°C/W
MECHANICAL DATA
Dimensions in mm (inches)
SMD05 (TO-276AA)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PIN 1 – Base
Underside View
PIN 2 – Collector
PIN 3 – Emitter
2
1
3
2.41 (0.095)
(0.030)
min.
3.05
(0.120)
5.72
(.225)
0.127 (0.005)
(0.296)
1
0
.16
(0.4
00
)
0.76
(0.030)
min.
3.175 (0.125)
Max.
0.50 (0.020)
max.
7.54
0.76
2.41 (0.095)
0.127 (0.005)
(0.286)
7.26
16 PLCS
0.50(0.020)
0.127 (0.005)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
NPN BIPOLAR TRANSISTOR
IN A CERAMIC SURFACE MOUNT
PACKAGE FOR
HIGH REL APPLICATIONS
FEATURES
HIGH VOLTAGE
FAST SWITCHING
CERAMIC SURFACE MOUNT PACKAGE
SCREENING OPTIONS AVAILABLE
相关PDF资料 |
PDF描述 |
|---|---|
| 2N3767 | 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N3772 | 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N3789XSMD-JQR-A | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-276AB |
| 2N3789XSMD-JQRR4 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-276AB |
| 2N3789XSMD.MODR4 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-276AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N376A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3 |
| 2N377 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-5 |
| 2N3771 | 功能描述:两极晶体管 - BJT NPN Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3771 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
| 2N3771/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:High Power NPN Silicon Power Transistors |
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