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参数资料
| 型号： | 2N3790 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 238K |
| 代理商： | 2N3790 |
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2N3790 Information
Category Transistors
2N3790 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 80
V(BR)CBO (V) : 80
I(C) Max. (A) : 10
Absolute Max. Power Diss. (W) : 150
Maxim um Operating Tem p (шC) : 175х
I(CBO) Max. (A) : 5.0mЧч
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 25
h(FE) Max. Current gain. : 90
@I(C) (A) (Test Condition) : 1.0
@V(CE) (V) (Test Condition) : 2.0
f(T) Min. (Hz) Transition Freq : 30k
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e :
t(on) Max. (s) On tim e. :
t(s) Max. (s) Storage tim e. :
t(f) Max. (s) Fall tim e. :
t(off) Max. (s) Off tim e :
Package Style : TO-3
Mounting Style : T
Description :
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Lanuage Translator:
Did you Know...
AMS has m ore than 17,000,000 electronic com ponents sitting on our warehouse shelves? With that kind of inventory, we can alm ost guarantee
that we've got the right part for the job! To find out for yourself, give us a call today: (973) 377-9566!
133 Kings Road, Madison, NJ 07940 USA (973) 377-9566 / Fax: (973) 377-3078
Copyright 2004 A merican Microsemiconductor Inc. A ll Rights Reserved.
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| 2N3790 | 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
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相关代理商/技术参数 |
参数描述 |
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| 2N3790 LEDFREE | 功能描述:两极晶体管 - BJT PNP GP Power RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3790SMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed |
| 2N3790X | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO3 |
| 2N3790XSMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed |
| 2N3791 | 功能描述:两极晶体管 - BJT PNP GP Power RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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