
01/99
2N3821, 2N3822
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25C
Reverse Gate Source & Reverse Gate Drain Voltage
– 50 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
300 mW
Power Derating
2mW/°C
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature:
2N3821
2N3822
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 50
V
IG = – 1 A, VDS = V
Gate Reverse Current
IGSS
– 0.1
nA
VGS = – 30V, VDS = V
– 0.1
A
VGS = – 30V, VDS = V
TA = 150°C
– 0.5
– 2
V
VDS = 15V, ID = 50 A
Gate Source Voltage
VGS
– 1
– 4
V
VDS = 15V, ID = 200 A
VVDS = 15V, ID = 400 A
Gate Source Cutoff Voltage
VGS(OFF)
– 4
– 6
V
VDS = 15V, ID = 0.5 nA
Drain Saturation Current (Pulsed)
IDSS
0.5
2.5
2
10
mA
VDS = 15V, VGS = V
Drain Cutoff Current
ID(OFF)
nA
VDS = 15V, VGS = – 8V
A
VDS = 15V, VGS = – 8V
TA = 150°C
Dynamic Electrical Characteristics
Drain Source ON Resistance
rds(on)
VGS = V, ID = V
f = 1 kHz
Common Source
gfs
1500 4500 3000 6500
S
VDS = 15V, VGS = V
f = 1 kHz
Forward Transconductance
Common Source
| Yfs |
1500
3000
S
VDS = 15V, VGS = V
f = 100 MHz
Forward Transmittance
Common Source Output Conductance
gos
10
20
S
VDS = 15V, VGS = V
f = 1 kHz
Common Source Input Capacitance
Ciss
66
pF
VDS = 15V, VGS = V
f = 1 MHz
Common Source
Crss
22
pF
VDS = 15V, VGS = V
f = 1 MHz
Reverse Transfer Capacitance
Equivalent Short Circuit
eN
200
200 nV/
√Hz V
DS = 15 V, VGS = V
f = 10 Hz
Input Noise Voltage
Noise Figure
NF
5
dB
VDS = 15V, VGS = V
f = 10 Hz
RG = 1 M
VHF Amplifiers
Small Signal Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp
1/13/99 2:09 PM
Page B-3