参数资料
型号: 2N3867SMD05-JQR-BR4
厂商: SEMELAB LTD
元件分类: 小信号晶体管
英文描述: 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-276AA
封装: HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN
文件页数: 1/1页
文件大小: 11K
代理商: 2N3867SMD05-JQR-BR4
2
1
3
2.41 (0.095)
(0.030)
min.
3.05
(0.120)
5.72
(.225)
0.127 (0.005)
(0.296)
1
0
.16
(0.4
00
)
0.76
(0.030)
min.
3.175 (0.125)
Max.
0.50 (0.020)
max.
7.54
0.76
2.41 (0.095)
0.127 (0.005)
(0.286)
7.26
16 PLCS
0.50(0.020)
0.127 (0.005)
2N3867SMD05
Bipolar PNP Device.
V
CEO =
40V
I
C = 1A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
40
V
I
C(CONT)
1
A
h
FE
@ 3/2.5 (V
CE / IC)
25
-
f
t
80M
Hz
P
D
1
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
15-Aug-02
Bipolar PNP Device in a
Hermetically sealed
Ceramic Surface Mount
Package for High
Reliability Applications
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
PINOUTS
1 – Base
2 – Collector
3 – Emitter
SMD0.5 (TO276AA)
相关PDF资料
PDF描述
2N3867SMD05-JQR 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-276AA
2N3867 3 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N3868 3 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N3867S 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
2N3868SMD05-JQR-BR4 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-276AA
相关代理商/技术参数
参数描述
2N3868 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 3A 3PIN TO-5 - Bulk 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR, PNP, 80V, 1A, TO-205AD-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:7W; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-65C; No. of Pins:3
2N3868JAN 制造商:n/a 功能描述:2N3868JAN
2N3868JANTX 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 3A 3-Pin TO-5
2N3868JANTXV 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 3A 3-Pin TO-5 制造商:Microsemi 功能描述:Trans GP BJT PNP 60V 3A 3-Pin TO-5
2N3868JTX84 制造商:n/a 功能描述:2N3868JTX