参数资料
型号: 2N3867SMD05
厂商: SEMELAB LTD
元件分类: 小信号晶体管
英文描述: 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-276AA
封装: HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN
文件页数: 1/3页
文件大小: 337K
代理商: 2N3867SMD05
PNP SWITCHING SILICON
TRANSISTOR
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 7960
Issue 2
Page 1 of 3
2N3867SMD05
High Voltage
Hermetic Ceramic Surface Mount Package
Ideally suited for Power Linear, Switching
and general Purpose Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
40V
VCEO
Collector – Emitter Voltage
40V
VEBO
Emitter – Base Voltage
4V
IC
Continuous Collector Current
3A
IB
Base Current
0.5A
PD
Total Power Dissipation at
TC = 25°C
(1)
35W
TA = 25°C
(2)
1.0W
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
Max.
Units
RθJC
Thermal Resistance, Junction To Case
5
°C/W
相关PDF资料
PDF描述
2N3868SMD 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-276AB
2N3868SMD-JQR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-276AB
2N3878 4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-66
2N6316 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66
2N388 200 mA, 20 V, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5
相关代理商/技术参数
参数描述
2N3868 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 3A 3PIN TO-5 - Bulk 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR, PNP, 80V, 1A, TO-205AD-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:7W; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-65C; No. of Pins:3
2N3868JAN 制造商:n/a 功能描述:2N3868JAN
2N3868JANTX 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 3A 3-Pin TO-5
2N3868JANTXV 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 3A 3-Pin TO-5 制造商:Microsemi 功能描述:Trans GP BJT PNP 60V 3A 3-Pin TO-5
2N3868JTX84 制造商:n/a 功能描述:2N3868JTX