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参数资料
| 型号： | 2N3879 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 75 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 文件页数： | 1/2页 |
| 文件大小： | 28K |
| 代理商： | 2N3879 |
6 Lake Street, Lawrence, MA 01841
3/98 REV: C
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
Value
Units
Collector-Emitter Voltage
VCEO
75
Vdc
Collector-Base Voltage
VCBO
120
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Base Current
IB
5.0
Adc
Collector Current
IC
7.0
Adc
Total Power Dissipation @ TC = 25
0C (1)
PT
35
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
5.0
0C/W
1) Derate linearly 200 mW/
0C for TC > 250C
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
V(BR)CEO
75
Vdc
Collector-Emitter Cutoff Current
VCE = 50 Vdc
ICEO
5.0
Vdc
Collector-Emitter Cutoff Current
VCE = 100 Vdc, VBE = 1.5 Vdc
ICEX
4.0
mAdc
Collector-Base Cutoff Current
VCB = 120 Vdc
ICBO
25
mAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
IEBO
10
mAdc
TECHNICAL DATA
2N3879 JANTX, JTXV
Processed per MIL-PRF-19500/526
NPN POWER SILICON TRANSISTOR
TO-66 (TO-213AA)
MIL-PRF
QPL
DEVICES
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PDF描述 |
|---|---|
| 2N388 | 20 V, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N389 | NPN, Si, POWER TRANSISTOR |
| 2N424 | NPN, Si, POWER TRANSISTOR |
| 2N389 | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-53 |
| 2N3902 | 2.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3879SMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N3879SMD05 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N388 | 制造商:PS 功能描述:2N388 N12I2B |
| 2N3880 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | TO-72 |
| 2N3884 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:PHASE CONTROL SCR |
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