- 您现在的位置：买卖IC网 > PDF目录142672 > 2N3904-TAP (VISHAY SEMICONDUCTORS) 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF资料下载
参数资料
| 型号： | 2N3904-TAP |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 103K |
| 代理商： | 2N3904-TAP |
2N3904
Document Number 85109
Rev. 1.3, 27-Oct-04
Vishay Semiconductors
www.vishay.com
1
18855
1
2
3
2
3
1
E
B
C
Small Signal Transistor (NPN)
Features
NPN Silicon Epitaxial Planar Transistor for switch-
ing and amplifier applications.
As complementary type, the PNP transistor
2N3906 is recommended.
On special request, this transistor is also manufac-
tured in the pin configuration TO-18.
This transistor is also available in the SOT-23 case
with the type designation MMBT3904.
Mechanical Data
Case: TO-92 Plastic case
Weight: approx. 177 mg
Packaging Codes/Options:
BULK / 5 k per container 20 k/box
TAP / 4 k per Ammopack 20 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
1) Valid provided that leads are kept at ambient temperature.
Part
Type differentiation
Ordering code
Remarks
2N3904
2N3904-BULK or 2N3904-TAP
Bulk / Ammopack
Parameter
Test condition
Symbol
Value
Unit
Collector - emitter voltage
VCEO
40
V
Collector - base voltage
VCBO
60
V
Emitter - base voltage
VEBO
6.0
V
Collector current
IC
200
mA
Power dissipation
TA = 25 °C
Ptot
625
mW
TC = 25 °C
Ptot
1.5
W
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
R
θ
JA
2501)
°C/W
Junction temperature
Tj
150
°C
Storage temperature range
TS
- 65 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6190R1 | 5000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2SJ479S | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ506S | 10 A, 30 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ656 | 18 A, 100 V, 0.104 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ546 | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3904TAR | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3904TF | 功能描述:两极晶体管 - BJT NPN 40V 200mA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3904TFR | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3904TR | 制造商:Allegro MicroSystems LLC 功能描述: 制造商:Semiconductors 功能描述: |
| 2N3904U | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
发布紧急采购，3分钟左右您将得到回复。