- 您现在的位置：买卖IC网 > PDF目录55779 > 2N3904 (LITE-ON SEMICONDUCTOR CORP) 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF资料下载
参数资料
| 型号： | 2N3904 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 2/2页 |
| 文件大小： | 23K |
| 代理商： | 2N3904 |
DS11102 Rev. J-3
2 of 2
2N3904
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
DC Current Gain
hFE
50
70
100
60
30
300
-VCE = 1.0V,- IC = 0.1mA
-VCE = 1.0V,- IC = 1.0mA
-VCE = 1.0V,- IC = 10mA
-VCE = 1.0V,- IC = 50mA
-VCE = 1.0V,- IC = 100mA
Collector Saturation Voltage
VCE(SAT)
0.25
0.40
V
(Note 2)
-IC = 10mA,- IB = 1.0mA
-IC = 50mA,- IB = 5.0mA
Base Saturation Voltage
VBE(SAT)
0.85
0.95
V
(Note 2)
-IC = 10mA, -IB = 1.0mA
-IC = 50mA, -IB = 5.0mA
Collector Cutoff Current
ICEX
50
nA
-VEB = 3.0V, -VCE = 30V
Emitter Cutoff Current
IBL
50
nA
-VEB = 3.0V, -VCE = 30V
Collector-Base Breakdown Voltage
V(BR)CBO
60
—
V
-IC = 10A, -IB = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
—
V
-IC = 1.0mA,- IE = 0 (Note 2)
Emitter-base Breakdown voltage
V(BR)EBO
5.0
—
V
-IE = 10A,- IC = 0
Gain Bandwidth Product
fT
250
—
MHz
VCE = 20V, -IC = 10mA,
-f = 100MHz
Collector-Base Capacitance
CCBO
4.5
pF
-VCB = 5.0V, -IE = 0, f = 100kHz
Emitter-Base Capacitance
CEBO
10
pF
-VEB = 0.5V, -IC = 0, f = 100kHz
Noise Figure
5.0
dB
-VCE = 5.0V, -IC = 100
A,
RG = 1.0k
, -f = 10 to 15000Hz
Delay Time
td
35
ns
-IB1 = 1.0mA, -IC = 10mA,
VCC = 3.0V, VBE(off) = 0.5V
Rise Time
tr
35
ns
-IB1 = 1.0mA,- IC = 10mA,
-VCC = 3.0V, -VBE(off) = 0.5V
Storage Time
ts
225
ns
-IB1 =- IB2 = 1.0mA,
-IC = 10mA, -VCC = 3.0V
Fall Time
tf
75
ns
-IB1 =- IB2 = 1.0mA,
-IC = 10mA, -VCC = 3.0V
Notes:
1. Leads maintained at a distance of 2.0mm from body at specified ambient temperature.
2. Pulse test: Pulse width
≤ 300s, duty cycle ≤ 2%.
相关PDF资料 |
PDF描述 |
|---|---|
| 2N3906AMO | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N3906U | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N3913 | 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N3919 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N3922 | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3904 J05Z | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans GP BJT NPN 40V 0.2A 3-Pin TO-92 Bulk |
| 2N3904(TE2,T) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 40V 0.2A 3-Pin TO-92 T/R |
| 2N3904,116 | 功能描述:TRANS NPN SW HS 200MA 40V TO92 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2N3904,412 | 功能描述:两极晶体管 - BJT TRANS SW BULK STR LEAD RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3904 | 制造商:UNBRANDED 功能描述:TRANSISTOR NPN TO-92 制造商:NTE Electronics 功能描述:RF TRANSISTOR, NPN, 40V, 250MHZ |
发布紧急采购，3分钟左右您将得到回复。