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参数资料
| 型号： | 2N3906/E6 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 封装： | PLASTIC, TO-92, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 37K |
| 代理商： | 2N3906/E6 |
2N3906
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88114
2
07-May-02
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
-VCE = 1 V, -IC = 0.1 mA
60
——
-VCE = 1 V, -IC = 1 mA
80
——
DC Current Gain
hFE
-VCE = 1 V, -IC = 10 mA
100
—
300
—
-VCE = 1 V, -IC = 50 mA
60
——
-VCE = 1 V, -IC = 100 mA
30
——
Collector-Emitter Cutoff Current
-ICEV
-VEB = 3 V, -VCE = 30 V
——
50
nA
Emitter-Base Cutoff Current
-IEBV
-VEB = 3 V, -VCE = 30 V
——
50
nA
Collector Saturation Voltage
-VCEsat
-IC = 10 mA, -IB = 1 mA
——
0.25
V
-IC = 50 mA, -IB = 5 mA
——
0.4
Base Saturation Voltage
-VBEsat
-IC = 10 mA, -IB = 1 mA
——
0.85
V
-IC = 50 mA, -IB = 5 mA
——
0.95
Collector-Emitter Breakdown Voltage
-V(BR)CEO
-IC = 1 mA, IB = 0
40
——
V
Collector-Base Breakdown Voltage
-V(BR)CBO
-IC = 10
A, IE = 0
40
——
V
Emitter-Base Breakdown Voltage
-V(BR)EBO
-IE = 10
A, IC = 0
5
——
V
Input Impedance
hie
-VCE = 10 V, -IC = 1 mA,
1
—
10
k
f = 1 kHz
Voltage Feedback Ratio
hre
-VCE = 10 V, -IC = 1 mA,
0.5 10-4
—
8 10-4
—
f = 1 kHz
Current Gain-Bandwidth Product
fT
-VCE = 20 V, -IC = 10 mA
250
——
MHz
f = 100 MHz
Collector-Base Capacitance
CCBO
-VCB = 5 V, f = 100 kHz
——
4.5
pF
Emitter-Base Capacitance
CEBO
-VEB = 0.5 V, f = 100 kHz
——
10
pF
Small Signal Current Gain
hfe
-VCE = 10 V, -IC = 1 mA
100
—
400
—
f = 1 kHz
Output Admittance
hoe
-VCE = 1 V, -IC = 1 mA
1
—
40
S
f = 1 kHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3906G | 功能描述:两极晶体管 - BJT 200mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3906-G | 功能描述:二极管 - 通用，功率，开关 -40V -200mA TO-92 RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| 2N3906G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| 2N3906GE8487 | 制造商:GE 功能描述:2N3906 |
| 2N3906G-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:GENERAL PURPOSE APPLIATION |
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