参数资料
型号: 2N3906CSM-SQR-A
厂商: SEMELAB LTD
元件分类: 小信号晶体管
英文描述: 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: HERMETIC SEALED, CERAMIC, LCC-3
文件页数: 2/2页
文件大小: 18K
代理商: 2N3906CSM-SQR-A
2N3906CSM
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td
Delay Time
tr
Rise Time
tf
Fall Time
ft
Current Gain Bandwidth Product
Cob
Output Capacitance
hoe
Output Admittance
hfe
Small Signal Current Gain
NF
Noise Figure
250
4.5
100
400
360
4
35
75
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
* Pulse Test: tp ≤ 300s, δ≤ 2%.
-40
-5
-50
-0.25
-0.40
-0.65
-0.85
-0.95
60
80
100
300
60
30
IC = -1mA
IB = 0
IC = -10AIE = 0
IE = -10AIC = 0
VCE = -30V
VBE = 3V
IC = -10mA
IB = -1mA
IC = -50mA
IB = -5mA
IC = -10mA
IB = -1mA
IC = -50mA
IB = -5mA
IC = -0.1mA
IC = -1mA
VCE = -1V
IC = -10mA
IC = -50mA
IC = -100mA
V(BR)CEO* Collector – Emitter Breakdown Voltage
V(BR)CBO
Collector – Base Breakdown Voltage
V(BR)EBO
Emitter – Base Breakdown Voltage
ICEX
Collector – Emitter Cut-off Current
VCE(sat)
Collector – Emitter Saturation Voltage
VBE(sat)
Base – Emitter Saturation Voltage
hFE*
DC Current Gain
V
nA
V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
VCE = -20V
IC = -10mA
f = 100MHz
VCB = -5V
IE = 0
f = 100kHz
VCE = -10V
IC = -10mA
f = 1kHz
VCE = -5V
IC = -100A
f = 1kHz
RS = 1k
VCC = 3V
VBE = 0.5V
IC = 10mA
IB1 = 1mA
VCC = 3V
IC = 10mA
IB1 = IB2 = 1mA
MHz
pF
hmos
dB
ns
SMALL SIGNAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
SWITCHING CHARACTERISTICS (TA = 25°C unless otherwise stated)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number
4283
Issue 1
相关PDF资料
PDF描述
2N3906CSM 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N3906O-BP 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N3906G 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N3906Y-BP 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N3906G-BP 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
2N3906DCSM 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PAIR | PNP | 40V V(BR)CEO | 200MA I(C) | LLCC
2N3906E 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR
2N3906G 功能描述:两极晶体管 - BJT 200mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N3906-G 功能描述:二极管 - 通用,功率,开关 -40V -200mA TO-92 RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
2N3906G 制造商:ON Semiconductor 功能描述:Bipolar Transistor