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参数资料
| 型号： | 2N3962 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 封装： | TO-18, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 238K |
| 代理商： | 2N3962 |
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2N3962 Information
Category Transistors
2N3962 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 60
V(BR)CBO (V) : 60
I(C) Max. (A) : 200m
Absolute Max. Power Diss. (W) : 360m
Maxim um Operating Tem p (шC) : 175х
I(CBO) Max. (A) : .01uШ
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. :
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
f(T) Min. (Hz) Transition Freq : 40M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
C(obo) (Max) (F) : 6p
@V(CB) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Package Style : TO-18
Mounting Style : T
Description :
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AMS has m ore than 17,000,000 electronic com ponents sitting on our warehouse shelves? With that kind of inventory, we can alm ost guarantee
that we've got the right part for the job! To find out for yourself, give us a call today: (973) 377-9566!
133 Kings Road, Madison, NJ 07940 USA (973) 377-9566 / Fax: (973) 377-3078
Copyright 2004 A merican Microsemiconductor Inc. A ll Rights Reserved.
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PDF描述 |
|---|---|
| 2N3963 | 200 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N3963 | 200 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N4033 | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3962CSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1 |
| 2N3963 | 功能描述:两极晶体管 - BJT SMALL SIGNAL TRANS PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3963CSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1 |
| 2N3964 | 功能描述:两极晶体管 - BJT PNP Low Noise RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3964CSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1 |
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