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参数资料
| 型号： | 2N3963G4 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 封装： | HERMETIC SEALED, METAL, TO-18, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 317K |
| 代理商： | 2N3963G4 |
SILICON PNP TRANSISTOR
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8779
Issue 1
Page 1 of 1
2N3963
General Purpose PNP Silicon Transistor
Low Power Amplifier Applications
Hermetic TO18 Package
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-80V
VCEO
Collector – Emitter Voltage
-80V
VEBO
Emitter – Base Voltage
-6V
IC
Continuous Collector Current
-200mA
PD
Total Power Dissipation at
TA = 25°C
0.36W
Derate Above 25°C
2.06mW/°C
TC = 25°C
1.2W
Derate Above 25°C
6.86mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ.
Max.
Unit
RθJA
Thermal Resistance, Junction To Ambient
486
°C/W
RθJC
Thermal Resistance, Junction To Case
146
°C/W
相关PDF资料 |
PDF描述 |
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| 2N3964DCSMG4 | 200 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BB |
| 2N3964 | 200 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N3964 | 200 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N3966 | 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3964 | 功能描述:两极晶体管 - BJT PNP Low Noise RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3964CSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1 |
| 2N3964DCSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Dual Bipolar PNP Devices in a hermetically sealed |
| 2N3965 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:SI PNP LO-PWR BJT |
| 2N3965CSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1 |
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