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参数资料
| 型号： | 2N3998 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 1/1页 |
| 文件大小： | 234K |
| 代理商： | 2N3998 |
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2N3998 Information
Category Transistors
2N3998 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 80
V(BR)CBO (V) : 100
I(C) Max. (A) : 5.0
Absolute Max. Power Diss. (W) : 2.0
Maxim um Operating Tem p (шC) : 175х
I(CBO) Max. (A) : 5.0uЧ
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 30
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 50m
@V(CE) (V) (Test Condition) : 2.0
f(T) Min. (Hz) Transition Freq : 40M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e :
t(on) Max. (s) On tim e. : 300n
t(s) Max. (s) Storage tim e. :
t(f) Max. (s) Fall tim e. :
t(off) Max. (s) Off tim e : 1.5u
Package Style : StR-10
Mounting Style : T
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相关PDF资料 |
PDF描述 |
|---|---|
| 2N3999 | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111 |
| 2N3996 | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111 |
| 2N3999 | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111 |
| 2N3996 | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111 |
| 2N3998 | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3998_02 | 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N3998SMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N3998SMD05 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N3999 | 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N3999SMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
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