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参数资料
| 型号： | 2N4029J |
| 厂商： | SEMICOA CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 封装： | HERMETIC SEALED, METAL CAN-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 420K |
| 代理商： | 2N4029J |
www.SEMICOA.com
2N4029
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 80 Volts
VCB = 60 Volts
VCB = 60 Volts, TA = 150°C
10
25
A
nA
A
Collector-Emitter Cutoff Current
ICEX
VCE = 60 Volts, VEB = 2 Volts
25
nA
Emitter-Base Cutoff Current
IEBO1
IEBO2
VBE = 5 Volts
VBE = 3 Volts
10
25
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
IC = 100 A, VCE = 5 Volts
IC = 100 mA, VCE = 5 Volts
IC = 500 mA, VCE = 5 Volts
IC = 1 A, VCE = 5 Volts
IC = 500 mA, VCE = 5 Volts
TA = -55°C
50
100
70
25
30
300
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.9
1.2
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
VCEsat3
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 1 A, IB = 100 mA
0.15
0.50
1.00
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 10 Volts, IC = 50 mA,
f = 100 MHz
1.5
6.0
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
20
pF
Open Circuit Input Capacitance
CIBO
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
80
pF
Switching Characteristics
Delay Time
Rise Time
td
tr
IC = 500 mA, IB = 50 mA
15
25
ns
Storage Time
Fall Time
ts
tf
IC = 500 mA, IB = 50 mA
175
35
ns
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
Semicoa Corporation.
Copyright
2010
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| 2N4030 | 功能描述:两极晶体管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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