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参数资料
| 型号： | 2N4036 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封装： | METAL PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 62K |
| 代理商： | 2N4036 |
ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Mi n.
Typ.
Max.
Unit
I CBO
Collector Cutoff Current
(IE =0)
VCB = – 60 V
– 20
nA
I CEO
Collector Cutoff Current
(IB =0)
VCE = – 30 V
– 0.5
A
I EBO
Emitter Cutoff Current
(IC =0)
VEB =– 5 V
– 20
nA
V( BR)CB O
Collector-base Breakdown
Voltage (IE =0)
I C =– 100 A
– 90
V
V(BR)CEX*
Collector-emitter Breakdown
Voltage (VBE = 1.5 V)
I C =– 10 mA
– 85
V
V(BR)CE R*
Collector-emitter Breakdown
Voltage (R BE =200
)
I C =– 10 mA
– 85
V
V(BR)CE O *
Collector-emitter Breakdown
Voltage (IB =0)
I C =– 10 mA
– 65
V
V(B R)E BO
Emitter-base Breakdown Voltage
(IC =0)
I E =– 100
A– 7
V
VCE(sat)*
Collector-emitter Saturation
Voltage
I C =– 150 mA
I B = – 15 mA
– 0.65
V
VBE *
Base-emitter Voltage
IC =– 150 mA
VCE = – 10 V
– 1.1
V
h FE*
DC Current Gain
I C = – 0.1 mA
I C =– 150 mA
I C =– 500 mA
VCE =– 10 V
20
40
20
140
f T
Transition Frequency
I C =– 50 mA
f = 20 MHz
VCE =– 10 V
60
MHz
C EBO
Emitter-base Capacitance
I C =0
f= 1 MHz
VEB = – 0.5 V
90
pF
C CBO
Collector-base Capacitance
I E =0
f= 1 MHz
VCB =– 10 V
30
pF
t on**
Turn-on Time
I C =– 150 mA
I B1 =– 15 mA
VCC = – 30V
110
ns
t of f**
Turn-off Time
I C =– 150 mA
I B1 =– I B2 =–
VCC =– 30 V
15 mA
700
ns
*
Pulsed : pulse duration = 300
s, duty cycle = 1 %.
** See test circuit.
THERMAL DATA
Rth j-cas e
R th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
25
175
°C/W
2N4036
2/5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4036 W/GOLD | 功能描述:TRANS PNP 65V 1A TO-39 制造商:central semiconductor corp 系列:* 零件状态:生命周期结束 标准包装:500 |
| 2N4036 | 制造商:UNBRANDED 功能描述:TRANSISTOR PNP TO-39 |
| 2N4036MC | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-39 |
| 2N4036MOT91 | 制造商:Motorola 功能描述:2N4036 |
| 2N4037 | 功能描述:两极晶体管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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