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参数资料
| 型号： | 2N4118A |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFETs |
| 中文描述： | N沟道JFET的 |
| 文件页数： | 4/5页 |
| 文件大小： | 61K |
| 代理商： | 2N4118A |
2N/PN/SST4117A Series
Vishay Siliconix
www.vishay.com
4
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
TYPICAL CHARACTERISTICS (T
A
= 25 C UNLESS OTHERWISE NOTED)
300
240
180
60
0
Transconductance vs. Gate-Source Voltage
Transfer Characteristics
Transconductance vs. Gate-Source Voltage
Transfer Characteristics
Common-Source Input Capacitance
vs. Gate-Source Voltage
Circuit Voltage Gain vs. Drain Current
500
0
4
5
2
1
0
T
A
=
55 C
125 C
100
0
0.4
0.2
0.8
1.0
80
60
20
0
200
160
120
40
0
T
A
= 125 C
55 C
T
A
=
55 C
125 C
V
DS
= 10 V
V
= 10 V
f = 1 kHz
V
DS
= 10 V
V
= 10 V
f = 1 kHz
T
A
=
55 C
125 C
0.1
1
0.01
100
0
V
GS(off)
=
0.7 V
2.5 V
R
L
10 V
I
D
Assume V
DD
= 15 V, V
DS
= 5 V
2.0
0
f = 1 MHz
V
DS
= 0 V
10 V
V
GS
Gate-Source Voltage (V)
I
D
Drain Current (mA)
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
V
GS(off)
=
0.7 V
V
GS(off)
=
0.7 V
V
GS(off)
=
2.5 V
V
GS(off)
=
2.5 V
40
80
60
20
40
80
25 C
25 C
0.6
0
0.4
0.2
0.8
1.0
0.6
3
0
4
5
2
1
3
0
16
20
8
4
12
120
400
300
100
200
1.6
1.2
0.4
0.8
A
V
g
fs
R
L
R
L
g
os
1
25 C
25 C
g
f
μ
S
g
f
μ
S
A
V
C
i
I
D
μ
A
I
D
μ
A
相关PDF资料 |
PDF描述 |
|---|---|
| 2N4117A | ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET |
| 2N4248 | Silicon PNP Transistors designed for low level - low nosie amplifier applications |
| 2N4249 | Silicon PNP Transistors designed for low level - low nosie amplifier applications |
| 2N4250 | Silicon PNP Transistors designed for low level - low nosie amplifier applications |
| 2N4250A | Silicon PNP Transistors designed for low level - low nosie amplifier applications |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4118A_TO-71 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:an Ultra-High Input Impedance N-Channel JFET |
| 2N4118A-2 | 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 3PIN TO-72 - Bulk |
| 2N4118A-E3 | 功能描述:JFET 40V 0.08mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N4119 | 制造商:Vishay Siliconix 功能描述: |
| 2N4119_TO-71 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:an Ultra-High Input Impedance N-Channel JFET |
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