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参数资料
| 型号： | 2N4124 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 1/1页 |
| 文件大小： | 51K |
| 代理商： | 2N4124 |
D
S21601 Rev. D-3
1 of 1
2N4124
2N4124
NPN SMALL SIGNAL TRANSISTOR
Features
Characteristic
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25
V
Collector-Base Voltage
VCBO
30
V
Emitter Base-Voltage
VEBO
5V
Collector Current
IC
200
mA
Peak Collector Current
ICM
800
mA
Base Current
IB
50
mA
Power Dissipation (Note 1)
Pd
625
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
200
K/W
Operating and Storage Temperature Range
Tj,TSTG
–65 to +150
°C
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
DC Current Gain
hFE
120
—
60
360
—
VCE = 1.0V, IC = 2.0mA
VCE = 1.0V, IC = 50mA
Collector-Base Cutoff Current
ICBO
—
50
nA
VCB = 20V
Emitter-Base Cutoff Current
IEBO
—
50
nA
VEB = 3.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
—
0.3
V
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
—
0.95
V
IC = 50mA, IB = 5.0mA
Collector-Emitter Breakdown Voltage
V(BR)CEO
25
—
V
IC = 1.0mA
Collector-Base Breakdown Voltage
V(BR)CBO
30
—
V
IC = 10A
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0
—
V
IE = 10A
Gain Bandwidth Product
fT
—
200
—
MHz
VCE = 5.0V, IC = 10mA,
f = 50MhZ
Collector-Base Capacitance
CCBO
—
12
pF
VCB = 10V, f = 1.0MHz
Electrical Characteristics @ TA = 25°C unless otherwise specified
For General Purpose Switching and Amplifier
Applications
Especially Suitable for AF Driver and Low
Power Output Stages
Case: TO-92, Plastic
Leads: Solderable per MIL STD 202,
Method 208
Pin Connections: See Diagram
Approx. Weight: 0.18 grams
Mechanical Data
Maximum Ratings @ TA = 25°C unless otherwise specified
D
CB E
H
BOTTOM
VIEW
E
A
B
C
G
TO-92
Dim
Min
Max
A
4.32
4.83
B
4.32
4.78
C
12.50
15.62
D
0.36
0.56
E
3.15
3.94
G
2.29
2.79
H
1.14
1.40
All Dimensions in mm
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4124/E6 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2N4124/E7 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-226AA |
| 2N4124_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
| 2N4124_D26Z | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4124_D27Z | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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