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参数资料
| 型号： | 2N4124RL1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC, TO-226AA, 3 PIN |
| 文件页数： | 12/24页 |
| 文件大小： | 350K |
| 代理商： | 2N4124RL1 |
2N4123 2N4124
2–15
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 2.0 mAdc, VCE = 1.0 Vdc)
2N4123
2N4124
(IC = 50 mAdc, VCE = 1.0 Vdc)
2N4123
2N4124
hFE
50
120
25
60
150
360
—
Collector – Emitter Saturation Voltage(1)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
—
0.3
Vdc
Base – Emitter Saturation Voltage(1)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
—
0.95
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N4123
2N4124
fT
250
300
—
MHz
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
8.0
pF
Collector–Base Capacitance
(IE = 0, VCB = 5.0 V, f = 1.0 MHz)
Ccb
—
4.0
pF
Small–Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k ohm, f = 1.0 kHz)
2N4123
2N4124
hfe
50
120
200
480
—
Current Gain — High Frequency
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N4123
2N4124
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
2N4123
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
2N4124
|hfe|
2.5
3.0
50
120
—
200
480
—
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k ohm,
2N4123
f = 1.0 kHz)
2N4124
NF
—
6.0
5.0
dB
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2.0%.
Figure 1. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 2. Switching Times
IC, COLLECTOR CURRENT (mA)
200
1.0
TIME
(ns)
100
50
30
20
70
10.0
5.0
7.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
CAP
ACIT
ANCE
(pF)
1.0
2.0 3.0
5.0 7.0 10
20 30 40
0.2 0.3
0.5 0.7
Cibo
Cobo
ts
td
tr
tf
VCC = 3 V
IC/IB = 10
VEB(off) = 0.5 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4124T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-92 |
| 2N4124TA | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4124TAR | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4124TAR_Q | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4124TF | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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