参数资料
型号: 2N4124RLRA
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: PLASTIC, TO-226AA, 3 PIN
文件页数: 24/24页
文件大小: 350K
代理商: 2N4124RLRA
6–5
Packaging Specifications
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TO–92 EIA, IEC, EIAJ
Radial Tape in Fan Fold
Box or On Reel
Radial tape in fan fold box or on reel of the reliable TO–92 package are
the best methods of capturing devices for automatic insertion in printed
circuit boards. These methods of taping are compatible with various
equipment for active and passive component insertion.
Available in Fan Fold Box
Available on 365 mm Reels
Accommodates All Standard Inserters
Allows Flexible Circuit Board Layout
2.5 mm Pin Spacing for Soldering
EIA–468, IEC 286–2, EIAJ RC1008B
Ordering Notes:
When ordering radial tape in fan fold box or on reel, specify the style per
Figures 3 through 8. Add the suffix “RLR” and “Style” to the device title, i.e.
MPS3904RLRA. This will be a standard MPS3904 radial taped and
supplied on a reel per Figure 9.
Fan Fold Box Information — Order in increments of 2000.
Reel Information — Order in increments of 2000.
US/European Suffix Conversions
US
EUROPE
RLRA
RL
RLRE
RL1
RLRM
ZL1
TO–92
RADIAL
TAPE IN
FAN FOLD
BOX OR
ON REEL
相关PDF资料
PDF描述
2N4123 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4123 Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
2N2221 Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-18
2N2540 Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-18
2N4124D74Z 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
2N4124T/R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-92
2N4124TA 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4124TAR 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4124TAR_Q 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4124TF 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2