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参数资料
| 型号： | 2N4125D26Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 3/10页 |
| 文件大小： | 556K |
| 代理商： | 2N4125D26Z |
2N4125
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown
Voltage*
IC = 1.0 mA, IB = 0
30
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
30
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
4.0
V
ICBO
Collector-Cutoff Current
VCB = 20 V, IE = 0
50
nA
IEBO
Emitter-Cutoff Current
VEB = 3.0 V, IC = 0
50
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 1.0 V, IC = 2.0 mA
VCE = 1.0 V, IC = 50 mA
50
25
150
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 50 mA, IB = 5.0 mA
0.4
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 50 mA, IB = 5.0 mA
0.95
V
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB = 5.0 V, f = 100 kHz
4.5
pF
Cib
Input Capacitance
VBE = 0.5 V, f = 100 kHz
10
pF
hfe
Small-Signal Current Gain
IC = 2.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 10 mA, VCE = 20 V,
f = 100 MHz
50
2.0
200
NF
Noise Figure
VCE = 5.0 V, IC = 100
A,
RS = 1.0 k
,
f = 10Hz to 15.7 kHz,
5.0
dB
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4125RA | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4125RLRA | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N4125RLRM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N4125TA | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4125TAR | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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