参数资料
型号: 2N4125RA
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件页数: 3/12页
文件大小: 355K
代理商: 2N4125RA
Product Folder - Fairchild P/N 2N4125 - PNP General Purpose Amplifier
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2N4125
PNP General Purpose Amplifier
Related Links
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Contents
General description
This device is designed for use as general
purpose amplifiers and switches requiring
collector currents of 10 A to 100 mA.
Datasheet
Product status/pricing/packaging
Product
Product status Pricing* Package type Leads Package marking Packing method
2N4125TF
Full Production
$0.05
3
N/A
TAPE REEL
2N4125TA
Full Production
$0.05
3
N/A
TAPE REEL
2N4125RA Full Production
$0.073
TO-92
3
$Y&3
2N
4125
TAPE REEL
2N4125
Full Production
$0.073
TO-92
3
$Y&3
2N
4125
BULK
2N4125BU Full Production
$0.05
3
N/A
BULK
* 1,000 piece Budgetary Pricing
Models
Package & leads
Condition
Temperature range
Software version
Revision date
PSPICE
TO-92-3
25°C
N/A
file:///H|/imaging/BITTING/cpl/20020725_1/07252002_10/FAIR/07252002/2N4125.html (1 of 2) [Jul/26/2002 9:39:53 AM]
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相关PDF资料
PDF描述
2N4126J05Z 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4126D74Z 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4126D26Z 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4223 Si, RF SMALL SIGNAL, FET, TO-72
2N5668 Si, RF SMALL SIGNAL, FET, TO-92
相关代理商/技术参数
参数描述
2N4125RLRA 制造商:Rochester Electronics LLC 功能描述:- Bulk
2N4125RLRM 制造商:Rochester Electronics LLC 功能描述:- Bulk
2N4125TA 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4125TAR 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4125TAR_Q 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2