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| 型号： | 2N4125RLRE |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC, TO-226AA, 3 PIN |
| 文件页数： | 12/24页 |
| 文件大小： | 349K |
| 代理商： | 2N4125RLRE |
2N4125
2–19
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 2.0 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
hFE
50
25
150
—
Collector – Emitter Saturation Voltage(1)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
—
0.4
Vdc
Base – Emitter Saturation Voltage(1)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
—
0.95
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
200
—
MHz
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
10
pF
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
4.5
pF
Small–Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
50
200
—
Current Gain — High Frequency
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
|hfe|
2.0
—
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k ohm, f = 1.0 kHz)
NF
—
5.0
dB
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle = 2.0%.
Cibo
Cobo
Figure 1. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 2. Switching Times
IC, COLLECTOR CURRENT (mA)
200
1.0
TIME
(ns)
100
50
30
20
70
10.0
5.0
7.0
2.0 3.0
5.0
10
20
30
50
100
200
CAP
ACIT
ANCE
(pF)
1.0
2.0 3.0
5.0
10
20 30 50
0.2 0.3
0.5
VCC = 3.0 V
IC/IB = 10
VBE(off) = 0.5 V
ts
tf
tr
td
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4125RLRM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N4125TA | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4125TAR | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4125TAR_Q | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4125TF | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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