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参数资料
| 型号： | 2N4150SJX |
| 厂商： | SEMICOA CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封装： | HERMETIC SEALED, METAL CAN-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 407K |
| 代理商： | 2N4150SJX |
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N4150S
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 100 mA
70
Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
VCB = 100 Volts
VCB = 80 Volts,
10
100
A
nA
Collector-Emitter Cutoff Current
ICEO
VCE = 60 Volts
10
A
Collector-Emitter Cutoff Current
ICEX1
ICEX2
VCE = 60Volts, VEB= .5Volts
VCE = 60Volts, VEB= .5Volts,
TA = 150°C
10
100
A
Emitter-Base Cutoff Current
IEBO1
IEBO2
VEB = 7 Volts
VEB = 5 Volts
10
100
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 1 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 10 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
TA = -55°C
50
40
10
20
200
120
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
IC = 5 A, IB = 500 mA
IC = 10 A, IB = 1 A
1.5
2.5
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC = 5 A, IB = 500 mA
IC = 10 A, IB = 1 A
0.6
2.5
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 10 Volts, IC = 200 mA,
f = 10 MHz
1.5
7.5
Small Signal Short Circuit Forward
Current Transfer Ratio
hFE
VCE = 5 Volts, IC = 50 mA,
f = 1 kHz
40
160
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
350
pF
Switching Characteristics
Delay Time
Rise Time
td
tr
IC = 5 A, IB = 500 mA,
50
500
ns
Storage Time
Fall Time
ts
tf
IC = 5 A, IB1= -IB2 = 500 mA
1.5
500
s
ns
Semicoa Corporation
Copyright
2010
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