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参数资料
| 型号： | 2N4233A |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 封装： | HERMETIC SEALED, METAL, TO-66, 2 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 10K |
| 代理商： | 2N4233A |
2N4233A
Bipolar NPN Device.
V
CEO =
80V
I
C = 5A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
80
V
I
C(CONT)
5
A
h
FE
@ 2/1.5 (V
CE / IC)
25
100
-
f
t
4M
Hz
P
D
35
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
TO66 (TO213AA)
PINOUTS
1 – Base
2 – Emitter
Case – Collector
Bipolar NPN Device in a
Hermetically sealed TO66
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
24.13
(0.95)
24.63
(0.97)
14.48
(0.570)
14.99
(0.590)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
0.71
(0.028)
0.86
(0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94
(0.470)
12.70
(0.500)
1
2
相关PDF资料 |
PDF描述 |
|---|---|
| 2N4233A-JQRR1 | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N4233 | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N4234 | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N4235 | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N4899 | 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-66 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4234 | 功能描述:两极晶体管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4235 | 功能描述:两极晶体管 - BJT PNP Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4235 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR PNP -60V TO-39 |
| 2N4236 | 功能描述:两极晶体管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4236A | 制造商: 功能描述: 制造商:undefined 功能描述: |
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