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参数资料
| 型号： | 2N4236 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-39 |
| 封装： | TO-39, 3 PIN |
| 文件页数： | 5/9页 |
| 文件大小： | 299K |
| 代理商： | 2N4236 |
2SJ530(L), 2SJ530(S)
Rev.5.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–20
0
–4
–8
–12
–16
0–2
–4
–6
–8
–10
–20
0
–4
–8
–12
–16
0
–1–2–3–4–5
Tc = 75°C
40
0
10
20
30
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–6 V
–5 V
–4 V
–3.5 V
–3 V
VGS = –2.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–100
–3
–10
–300
–30
–1
–0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1000
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
= 25°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–4.0
0
–0.8
–1.6
–2.4
–3.2
0
–4
–8
–12
–16
–20
Pulse Test
ID = –15 A
–10 A
–5 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
0.1
0.02
0.05
0.01
–0.3
–10
–30
–0.1
–3
–1
–100
1
0.5
VGS = –4 V
–10 V
Pulse Test
–25°C
25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4236A | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 2N4236X | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNP |
| 2N4237 | 功能描述:两极晶体管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4238 | 功能描述:两极晶体管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4239 | 功能描述:两极晶体管 - BJT NPN Power Ampl RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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