- 您现在的位置：买卖IC网 > PDF目录33246 > 2N4237 (MICROSEMI CORP-LAWRENCE) 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 PDF资料下载
参数资料
| 型号： | 2N4237 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封装： | TO-39, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 53K |
| 代理商： | 2N4237 |
2N4237, 4238, 4239 JAN, JANTX, JANTXV
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward Current Transfer Ratio
IC = 250 mAdc, VCE = 1.0 Vdc
IC = 500 mAdc, VCE = 1.0 Vdc
hFE
30
150
Collector-Emitter Saturation Voltage
IC = 500 Adc, IB = 50 Adc
IC = 1.0 Adc, IB = 0.1 Adc
VCE(sat)
0.3
0.6
Vdc
Base-Emitter Saturation Voltage
IC = 500 Adc, IB = 50 Adc
IC = 1.0 Adc, IB = 0.1 Adc
VBE(sat)
1.0
1.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal
Short Circuit Forward-Current Transfer Ratio
IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz
h
fe
3.0
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 100 kHz
Cobo
100
pF
SAFE OPERATING AREA
DC Tests
TC = +25
0C, 1 Cycle, t
≥ 0.5 s
Test 1
VCE = 6.0 Vdc, IC = 1.0 Adc
Test 2
VCE = 12 Vdc, IC = 500 mAdc
Test 3
VCE = 30 Vdc, IC = 166 mAdc
2N4237
VCE = 50 Vdc, IC = 100 mAdc
2N4238
VCE = 70 Vdc, IC = 71 mAdc 2N4239
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
相关PDF资料 |
PDF描述 |
|---|---|
| 2N4238 | 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N4238.MOD | 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N4238 | 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N4238.MODR1 | 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N4249 | PNP, Si, SMALL SIGNAL TRANSISTOR, TO-106 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4238 | 功能描述:两极晶体管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4239 | 功能描述:两极晶体管 - BJT NPN Power Ampl RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4239X | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-39 |
| 2N424 | 制造商:TI 功能描述:2N424 |
| 2N4240 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 300V 2A 3-Pin(2+Tab) TO-66 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 2A 2PIN TO-66 - Bulk |
发布紧急采购，3分钟左右您将得到回复。