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参数资料
型号： 2N4338-41
厂商： CALOGIC LLC
英文描述： N-Channel JFET Low Noise Amplifier
中文描述： N沟道场效应低噪声放大器
文件页数： 1/1页
文件大小： 19K
代理商： 2N4338-41
N-Channel JFET
Low Noise Amplifier
2N4338 – 2N4341
FEATURES
Exceptionally High Figure of Merit
Radiation Immunity
Extremely Low Noise and Capacitance
High Input Impedance
APPLICATIONS
Low-level Choppers
Data Switches
Multiplexers and Low Noise Amplifiers
ABSOLUTE MAXIMUM RATINGS
(TA = 25
oC unless otherwise noted)
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65
oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55
oC to +175oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25
oC . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
2N4338-41
Hermetic TO-18
-55
oC to +175oC
X2N4338-41
Sorted Chips in Carriers
-55
oC to +175oC
CORPORATION
PIN CONFIGURATION
S
TO-18
G,C
D
ELECTRICAL CHARACTERISTICS (TA = 25
oC unless otherwise specified)
SYMBOL
PARAMETER
2N4338
2N4339
2N4340
2N4341
UNITS
TEST CONDITIONS
MIN MAX MIN MAX MIN MAX MIN MAX
IGSS
Gate Reverse Current
-0.1
nA
VGS = -30V, VDS = 0
TA = 150
oC
-0.1
A
BVGSS
Gate-Source Breakdown Voltage
-50
V
IG = -1
A, VDS = 0
VGS(off)
Gate-Source Cutoff Voltage
-0.3
-1
-0.6
-1.8
-1
-3
-2
-6
VDS = 15V, ID = 0.1
A
ID(off)
Drain Cutoff Current
0.05
(-5)
0.05
(-5)
0.05
(-5)
0.07
(-10)
nA
(V)
VDS = 15V,
VGS = ( )
IDSS
Saturation Drain Current (Note 2)
0.2
0.6
0.5
1.5
1.2
3.6
3
9
mA
VDS = 15V, VGS = 0
gfs
Common-Source Forward
Transconductance (Note 2)
600 1800 800 2400 1300 3000 2000 4000
S
VDS = 15V,
VGS = 0
f = 1kHz
gos
Common-Source Output Conductance
5
15
30
60
rDS(on)
Drain-Source ON Resistance
2500
1700
1500
800
ohm
VDS = 0, IDS = 0
Ciss
Common-Source Input Capacitance
7777
pF
VDS = 15V,
VGS = 0 (Note 1)
f = 1MHz
Crss
Common-Source Reverse Transfer
Capacitance
3333
NF
Noise Figure (Note 1)
1111
dB
VDS = 15V,
VGS = 0
Rgen = 1meg,
BW = 200Hz
f = 1kHz
NOTES: 1. For design reference only, not 100% tested.
2. Pulse test duration 2ms (non-JEDEC Condition).
5010
相关PDF资料
PDF描述
2N4338 N-Channel JFET Low Noise Amplifier
2N4339 N-Channel JFET Low Noise Amplifier
2N4340 N-Channel JFET Low Noise Amplifier
2N4341 N-Channel JFET Low Noise Amplifier
2N4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
相关代理商/技术参数
参数描述
2N4338-E3 功能描述:JFET 50V 0.6mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
2N4339 功能描述:JFET 50V 1.5mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
2N4339-2 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 3PIN TO-18 - Bulk
2N4339-E3 功能描述:JFET 50V 1.5mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
2N4340 功能描述:JFET Gen Purp JFET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
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