参数资料
型号: 2N4339-JQR-AG4
厂商: SEMELAB LTD
元件分类: 小信号晶体管
英文描述: 50 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA
封装: HERMETIC SEALED, TO-46, 3 PIN
文件页数: 2/2页
文件大小: 21K
代理商: 2N4339-JQR-AG4
2N4339
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3887
Issue 1
OFF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)GSS
Gate-Source Breakdown Voltage
IG = -1A
50
V
IGSS
Gate Reverse Current
VGS = -30V
0.1
nA
VGS(OFF)
Gate-Source Cutoff Voltage
VDS = 15V
ID = 0.1A
-0.6
-1.8
V
SMALL SIGNAL CHARACTERISTICS
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
|Yfs|
Forward Transfer Admittance
800
2400
|Yos|
Output Admittance
VDS = 15V
f = 1.0KHz
15
S
Ciss
Input Capacitance
6.0
Crss
Reverse Transfer Capacitance
VDS = 15V
f = 1.0KHz
2.0
pF
rds(on)
Drain Source On Resistance
VDS = 0V
f = 1.0KHz
1700
VGS = 0V
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
FUNCTIONAL CHARACTERISTICS
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
NF
Noise Figure
1.0
dB
VDS = 15V
f = 1.0KHz
RG = 1.0M
ON ELECTRICAL CHARACTERISTICS
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IDSS
Zero Gate Voltage Drain Current
VDS = 15V
0.5
1.5
mA
相关PDF资料
PDF描述
2N4339 50 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA
2N4339-JQR-BG4 50 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA
2N4351 30 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF
2N4356 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-222AB
2N4358 100 mA, 240 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
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