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| 型号： | 2N4341 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小栅源击穿电压-50V，最大饱和漏极电流9mA的N沟道结型场效应管) |
| 中文描述： | N沟道场效应（最小栅源击穿电压- 50V的最大饱和漏极电流九毫安的N沟道结型场效应管） |
| 文件页数： | 2/6页 |
| 文件大小： | 73K |
| 代理商： | 2N4341 |
2N4338/4339/4340/4341
2
Siliconix
P-37408—Rev. D, 04-Jul-94
Specifications
a
for 2N4338 and 2N4339
Limits
2N4338
2N4339
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
I
G
= –1 A , V
DS
= 0 V
–57
–50
–50
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 0.1 A
–0.3
–1
–0.6
–1.8
Saturation Drain Current
c
I
DSS
V
DS
= 15 V, V
GS
= 0 V
0.2
0.6
0.5
1.5
mA
Gate Reverse Current
I
GSS
V
GS
= –30 V, V
DS
= 0 V
–2
–100
–100
pA
T
A
= 150 C
–4
–100
–100
nA
Gate Operating Current
c
I
G
V
DG
= 15 V, I
D
= 0.1 mA
–2
pA
Drain Cutoff Current
I
D(off)
V
DS
= 15 V, V
GS
= –5 V
2
50
50
Gate-Source Forward Voltage
d
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
g
fs
= 15 V V
= 0 V f = 1 kHz
V
DS
= 15 V, V
GS
= 0 V, f = 1 kHz
0.6
1.8
0.8
2.4
mS
Common-Source
Output Conductance
g
os
5
15
S
Drain-Source On-Resistance
r
ds(on)
V
DS
= 0 V, V
GS
= 0 V, f = 1 kHz
2500
1700
Common-Source
Input Capacitance
C
iss
= 15 V V
= 0 V f = 1 MHz
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
5
7
7
pF
Common-Source
Reverse Transfer Capacitance
C
rss
1.5
3
3
Equivalent Input Noise Voltage
d
e
n
V
DS
= 10 V, V
GS
= 0 V, f = 1 kHz
6
nV
√
Hz
Noise Figure
NF
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz, R
G
= 1 M
1
1
dB
Specifications
a
for 2N4340 and 2N4341
Limits
2N4340
2N4341
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
I
G
= –1 A , V
DS
= 0 V
–57
–50
–50
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 0.1 A
–1
–3
–2
–6
Saturation Drain Current
c
I
DSS
V
DS
= 15 V, V
GS
= 0 V
1.2
3.6
3
9
mA
Gate Reverse Current
I
GSS
V
GS
= –30 V, V
DS
= 0 V
–2
–100
–100
pA
T
A
= 150 C
–4
–100
–100
nA
Gate Operating Current
c
I
G
V
DG
= 15 V, I
D
= 0.1 mA
–2
Drain Cutoff Current
D( ff)
I
D(off)
= 15 V
V
DS
= 15 V
V
GS
= –5 V
2
50
pA
V
GS
= –10 V
3
70
Gate-Source Forward Voltage
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4341-E3 | 功能描述:JFET 50V 3.6mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N4342 | 制造商:Motorola 功能描述:2N4342 TO92 MOT N3E7D 制造商:Solid Technology Solutions 功能描述: 制造商:SSI 功能描述: |
| 2N4343 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:LOW NOISE VOLTAGE |
| 2N4347 | 制造商:Harris Corporation 功能描述: 制造商:UNK 功能描述: |
| 2N4348 | 制造商:SAB 功能描述:Bipolar Junction Transistor, NPN Type, TO-3 制造商:WESTINGHOUSE 功能描述:Bipolar Junction Transistor, NPN Type, TO-3 |
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