参数资料
型号: 2N4391
厂商: VISHAY SILICONIX
元件分类: 小信号晶体管
英文描述: N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA
封装: HERMETIC SEALED, TO-18, 3 PIN
文件页数: 4/7页
文件大小: 59K
代理商: 2N4391
2N/PN/SST4391 Series
Vishay Siliconix
www.vishay.com
7-4
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
160
120
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. Drain Current
100
0
–10
0
200
160
0
rDS
IDSS
rDS @ ID = 1 mA, VGS = 0 V
IDSS @ VDS = 20 V, VGS = 0 V
100
0
1
10
100
On-Resistance vs. Temperature
200
–55
25
125
0
–15
85
ID = 1 mA
rDS changes X 0.7%/
_C
Turn-On Switching
5
0
–10
4
3
2
1
0
Switching
T
ime
(ns)
td(on) @
ID = 3 mA
td(on) @
ID = 12 mA
tr approximately independent of ID
VDD = 5 V, RG = 50 W
VGS(L) = –10 V
Turn-Off Switching
30
010
24
18
12
6
0
VGS(off) = –2 V
VGS(off) = –8 V
td(off) independent of device VGS(off)
VDD = 5 V, VGS(L) = –10 V
Capacitance vs. Gate-Source Voltage
30
–20
24
18
12
6
0
Capacitance
(pF)
f = 1 MHz
VDS = 0 V
0
VGS(off) – Gate-Source Cutoff Voltage (V)
TA – Temperature (_C)
VGS – Gate-Source Voltage (V)
VGS(off) – Gate-Source Cutoff Voltage (V)
ID – Drain Current (mA)
80
60
40
20
80
40
80
60
40
20
–2
–4
–6
–8
–35
120
80
40
5
45
65
105
–2
–4
–6
–8
24
6
8
–4
–8
–12
–16
Switching
T
ime
(ns)
VGS(off) = –2 V
–4 V
–8 V
TA = 25_C
tr
VGS(off) = –2 V
–4 V
–8 V
td(off)
Ciss
Crss
tf
r DS
(on)
Drain-Source
On-Resistance
(
)
r DS
(on)
Drain-Source
On-Resistance
(
)
r DS
(on)
Drain-Source
On-Resistance
(
)
IDS
S
Saturation
Drain
Current
(mA)
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2N4391 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18
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