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参数资料
| 型号： | 2N4392 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最大导通电阻60Ω，夹断电流5pA的N沟道结型场效应管) |
| 中文描述： | N沟道场效应（最大导通电阻60Ω，夹断电流5pA的N沟道结型场效应管） |
| 文件页数： | 3/6页 |
| 文件大小： | 83K |
| 代理商： | 2N4392 |
2N/PN/SST4391 Series
Siliconix
E-77090—Rev. E, 11-Aug-97
3
Specifications
a
Limits
4391
4392
4393
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static (Cont’d)
Drain-Source
On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA
30
60
100
Gate-Source
Forward Voltage
V
GS(F)
I
= 1 mA
G
V
DS
= 0 V
2N
0.7
1
1
1
V
PN/SST
0.7
Dynamic
Common-Source
Forward
Transconductance
g
fs
V
DS
= 20 V, I
D
= 1 mA, f = 1 kHz
6
mS
Common-Source
Output Conductance
g
os
25
S
Drain-Source
On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 0 mA , f = 1 kHz
30
60
100
Common-S
Input Capacitance
V
DS
= 20 V V
GS
= 0 V
f = 1 MHz
f 1 MHz
2N
12
14
14
14
C
iss
PN
12
SST
13
2N: V
GS
= –5 V
2N: V
GS
= –7 V
2N: V
GS
= –12 V
PN: V
GS
= –5 V
PN: V
GS
= –7 V
PN: V
GS
= –12 V
SST: V
GS
= –5 V
SST: V
GS
= –7 V
SST: V
GS
= –12 V
3.3
3.5
3.2
3.5
2.8
3.5
pF
Common-Source
Common Source
Reverse Transfer
Capacitance
V
DS
= 0 V
f = 1 MHz
f 1 MHz
3.5
5
C
rss
3.4
5
3.0
5
3.6
3.5
3.1
Equivalent Input
Noise Voltage
e
n
V
DS
= 10 V, I
D
= 10 mA
f = 1 kHz
3
nV
√
Hz
Switching
t
d(on)
2N/PN
2
15
15
15
Turn On Time
Turn-On Time
SST
2
t
r
2N/PN
2
5
5
5
V
DD
= 10 V
V
GS(H)
= 0 V
See Switching Circuit
SST
2
ns
d( ff)
t
d(off)
2N/PN
6
20
35
50
Turn-Off Time
SST
6
t
f
2N/PN
13
15
20
30
SST
13
Notes
a.
b.
c.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
NCB
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