参数资料
型号: 2N4392C
厂商: LINEAR INTEGRATED SYSTEMS INC
元件分类: 小信号晶体管
英文描述: N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18
封装: METAL PACKAGE-3
文件页数: 1/12页
文件大小: 656K
代理商: 2N4392C
FEATURES
Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393
LOW ON RESISTANCE
rDS(on) ≤ 30
FAST SWITCHING
tON ≤ 15ns
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature (2N)
-65 to 200°C
Storage Temperature (PN/SST)
-55 to 150°C
Junction Operating Temperature (2N)
-55 to 200°C
Junction Operating Temperature (PN/SST)
-55 to 150°C
Maximum Power Dissipation
Continuous Power Dissipation (2N)
1800mW
Continuous Power Dissipation (PN/SST)
350mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain or Source (2N/PN)
-40V
Gate to Drain or Source (SST)
-35V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
4391
4392
4393
SYM.
CHARACTERISTIC
TYP
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
CONDITIONS
2N/PN
-40
BVGSS
Gate to Source
Breakdown Voltage
SST
-35
IG = -1A, VDS = 0V
2N/PN
-4
-10
-2
-5
-0.5
-3
VDS = 20V, ID = 1nA
VGS(off)
Gate to Source
Cutoff Voltage
SST
-4
-10
-2
-5
-0.5
-3
VDS = 15V, ID = 10nA
VGS(F)
Gate to Source Forward Voltage
0.7
1
IG = 1mA, VDS = 0V
0.25
0.4
VGS = 0V, ID = 3mA
0.3
0.4
VGS = 0V, ID = 6mA
VDS(on)
Drain to Source On Voltage
0.35
0.4
V
VGS = 0V, ID = 12mA
2N
50
150
25
75
5
30
PN
50
100
25
100
5
60
IDSS
Drain to Source
Saturation Current
2
SST
50
25
5
mA
VDS = 20V, VGS = 0V
2N/SST
-5
-100
IGSS
Gate Leakage Current
PN
-5
-1000
VGS = -20V, VDS = 0V
IG
Gate Operating Current
-5
pA
VDG = 15V, ID = 10mA
2N SERIES
D
S
G
2
1
3
BOTTOM VIEW
TO-18
PN SERIES
TO-92
BOTTOM VIEW
12
3
DS G
SST SERIES
1
2
3
SOT-23
TOP VIEW
D
G
S
Linear Integrated Systems
2N/PN/SST4391
SERIES
SINGLE N-CHANNEL JFET SWITCH
Linear Integrated Systems 4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
相关PDF资料
PDF描述
2N4392 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18
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