参数资料
型号: 2N43A
厂商: AMERICAN MICROSEMICONDUCTOR INC
元件分类: 小信号晶体管
英文描述: 300 mA, 30 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-5
封装: TO-5, 3 PIN
文件页数: 1/2页
文件大小: 263K
代理商: 2N43A
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2N43A Information
Category Transistors
Class Transistors; Bipolar; Ge PNP Low-Power
Type Bipolar; Ge PNP Low-Power
2N43A Specifications
Military/High-Rel : N
V(BR)CEO (V) : 30
V(BR)CBO (V) : 45
I(C) Max. (A) : 300m
Absolute Max. Power Diss. (W) : 150m
Maximum Operating Temp (шC) : 85х
I(CBO) Max. (A) : 16u
@V(CBO) (V) (Test Condition) : 45
h(FE) Min. Current gain. : 30
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 100m
@V(CE) (V) (Test Condition) : 1.0
h(fe) Min. SS Current gain. : 30у
@I(C) (A) (Test Condition) : 100m
@V(CE) (V) (Test Condition) : 1.0
@Freq. (Hz) (Test Condition) :
f(T) Min. (Hz) Transition Freq : 1.3M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
C(obo) (Max) (F) : 60p
@V(CB) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Package Style : TO-5
Mounting Style : T
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2N43A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod...
http://www.americanmicrosemi.com/information/spec/?ss_pn=2N43A
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11/7/2009 2:07 AM
相关PDF资料
PDF描述
2N43A 300 mA, 45 V, PNP, Ge, SMALL SIGNAL TRANSISTOR
2N45 10 mA, 45 V, PNP, Ge, SMALL SIGNAL TRANSISTOR
2N43 300 mA, 30 V, PNP, Ge, SMALL SIGNAL TRANSISTOR
2N43A 300 mA, 30 V, PNP, Ge, SMALL SIGNAL TRANSISTOR
2N525 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
相关代理商/技术参数
参数描述
2N440 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | TO-5
2N4400 功能描述:两极晶体管 - BJT TO-92 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4400/D 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistors NPN
2N4400_01 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier
2N4400_D74Z 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2