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参数资料
| 型号： | 2N4401-BULK |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 101K |
| 代理商： | 2N4401-BULK |
2N4401
Document Number 85111
Rev. 1.2, 27-Oct-04
Vishay Semiconductors
www.vishay.com
1
18855
1
2
3
2
3
1
E
B
C
Small Signal Transistor (NPN)
Features
NPN Silicon Epitaxial Transistor for switching and
amplifier applications.
As complementary type, the PNP transistor
2N4403 is recommended.
On special request, this transistor is also manufac-
tured in the pin configuration TO-18.
This transistor is also available in the SOT-23 case
with the type designation MMBT4401.
Mechanical Data
Case: TO-92 Plastic case
Weight: approx. 177 mg
Packaging Codes/Options:
BULK / 5 k per container 20 k/box
TAP / 4 k per Ammopack 20 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
Part
Type differentiation
Ordering code
Remarks
2N4401
2N4401-BULK or 2N4401-TAP
Bulk / Ammopack
Parameter
Test condition
Symbol
Value
Unit
Collector - emitter voltage
VCEO
40
V
Collector - base voltage
VCBO
60
V
Emitter - base voltage
VEBO
6.0
V
Collector current
IC
600
mA
Power dissipation
TA = 25 °C
Ptot
625
mW
Derate above 25 °C
5.0
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
R
θ
JA
200
°C/W
Thermal resistance junction to
case
R
θ
JC
83.3
°C/W
Junction temperature
Tj
150
°C
Storage temperature range
TS
- 55 to + 150
°C
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| 2N4402TPER1 | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N4402TPE1 | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4401-BULKS | 功能描述:两极晶体管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4401G | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4401G-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| 2N4401G-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| 2N4401-J61Z | 制造商:Texas Instruments 功能描述:1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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