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参数资料
型号： 2N4401T93
元件分类： 小信号晶体管
英文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装： SC-43, 3 PIN
文件页数： 1/4页
文件大小： 91K
代理商： 2N4401T93
UMT4401 / SST4401 / MMST4401 / 2N4401
Transistors
NPN Medium Power Transistor
(Switching)
UMT4401 / SST4401 / MMST4401 / 2N4401
!Features
1) BVCEO
>40V (IC=1mA)
2) Complements the UMT4403 / SST4403 / MMST4403
/ PN4403.
!
!Package, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
UMT4401
UMT3
R2X
T106
3000
SST4401
SST3
R2X
T116
3000
MMST4401
SMT3
R2X
T146
3000
2N4401
TO-92
-
T93
3000
!
!Absolute maximum ratings
(Ta=25
°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Tj
Tstg
Limits
60
40
6
0.6
0.625
150
-55~+150
Unit
V
A
Collector power
dissipation
PC
0.2
W
C
2N4401
UMT4401
SST4401
MMST4401
!
!External dimensions
(Units : mm)
UMT4401
SST4401
MMST4401
2N4401
0
~0.1
0.2Min.
2.4
±
0.2
1.3
0.95
0.45
±0.1
0.15
0.4
2.9
±0.2
1.9
±0.2
0.95 0.95
+0.2
0.1
+0.2
+0.1
0.06
+0.1
0.05
(2)
(1)
(3)
0~0.1
2.8
±
0.2
1.6
0.3
~
0.6
1.1
0.8
±0.1
0.15
0.4
2.9
±0.2
1.9
±0.2
0.95 0.95
+0.2
0.1
+0.2
+0.1
0.06
+0.1
0.05
(2)
(1)
(3)
0
~0.1
(2)
(1)
(3)
0.1~0.4
2.1
±
0.1
1.25
±
0.1
0.9±0.1
0.2
0.7±0.1
0.15±0.05
0.3
2.0±0.2
1.3±0.1
0.65 0.65
+0.1
0
4.8
±
0.2
(12.7Min.)
2.5Min.
4.8
±0.2
3.7
±0.2
5
0.45
±0.1
2.3
0.5
±0.1.
2.5 +0.3
0.1
(1)
(2)
(3)
All terminals have the same
dimensions
All terminals have the same
dimensions
All terminals have the same
dimensions
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
!
!Electrical characteristics
(Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVCBO
BVCEO
BVEBO
ICBO
IEBO
60
40
6
-
0.1
V
A
IC=100
A
IC
=1mA
IE
=100
A
VCB
=35V
VEB
=5V
-
1.2
Base-emitter saturation voltage
VBE(sat)
-
0.95
V
-
0.75
IC/IB
=500mA/50mA
Collector-emitter saturation voltage
VCE(sat)
-
0.4
V
IC/IB
=150mA/15mA
IC/IB
=500mA/50mA
IC/IB
=150mA/15mA
40
-
100
-
300
DC current transfer ratio
hFE
80
-
40
-
20
-
VCE=1V, IC=0.1mA
VCE
=1V, IC=1mA
VCE
=1V, IC=10mA
VCE
=1V, IC=150mA
VCE
=2V, IC=500mA
Transition frequency
Collector output capacitance
fT
Cob
250
-
6.5
MHz
pF
VCE
=10V, IE=-20mA, f=100MHz
VCB
=10V, f=100kHz
Emitter input capacitance
Cib
-
30
pF
VEB
=0.5V, f=100kHz
Delay time
td
-
15
ns
VCC
=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA
VCC
=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA
Rise time
tr
-
20
ns
Storage time
tstg
-
225
ns
VCC
=30V, IC=150mA, IB1=-IB2=15mA
VCC
=30V, IC=150mA, IB1=-IB2=15mA
Fall time
tf
-
30
ns
相关PDF资料
PDF描述
2N4401TPE2 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4401TPE1 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4401 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4401 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
2N4401/E6 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
相关代理商/技术参数
参数描述
2N4401TA 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4401TA_Q 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4401TAR 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4401TE 制造商:Allegro MicroSystems LLC 功能描述:TRANSISTOR, BJT, NPN, 40V V(BR)
2N4401TF 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
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