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参数资料
| 型号： | 2N4403 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 89K |
| 代理商： | 2N4403 |
www.vishay.com
2
Document Number 85131
Rev. 1.2, 15-Oct-04
2N4403
Vishay Semiconductors
Maximum Thermal Resistance
Electrical DC Characteristics
1) Pulse test: Pulse width
≤ 300 s - Duty cycle ≤ 2 %.
Electrical AC Characteristics
Switching Characteristics
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
R
θ
JA
200
°C/W
Thermal resistance junction to
case
R
θ
JC
83.3
°C/W
Junction temperature
Tj
150
°C
Storage temperature range
TS
- 55 to + 150
°C
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
DC current gain
- VCE = 1 V, - IC = 0.1 mA
hFE
30
- VCE = 1 V, - IC = 1 mA
hFE
60
- VCE = 1 V, - IC = 10 mA
hFE
100
- VCE = 2 V, - IC = 150 mA
hFE
100
300
- VCE = 2 V, - IC = 500 mA
hFE
20
Collector cut-off current
- VEB = 0.4 V, - VCE = 35 V
- ICEV
100
nA
Base cut-off current
- VEB = 0.4 V, - VCE = 35 V
- IBEV
100
nA
Collector - emitter saturation
voltage1)
- IC = 150 mA, - IB = 15 mA
- VCEsat
0.40
V
- IC = 500 mA, - IB = 50 mA
- VCEsat
0.75
V
Base - emitter saturation
voltage1)
- IC = 150 mA, - IB = 15 mA
- VBEsat
0.75
0.95
V
- IC = 500 mA, - IB = 50 mA
- VBEsat
1.30
V
Collector - emitter breakdown
voltage
- IC = 1 mA, IB = 0
- V(BR)CEO
40
V
Collector - base breakdown
voltage
- IC = 0.1 mA, IE = 0
- V(BR)CBO
40
V
Emitter - base breakdown
voltage
- IE = 0.1 mA, IC = 0
- V(BR)EBO
5.0
V
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
Input impedance
- VCE = 10 V, - IC = 1 mA,
f = 1 kHz
hie
1.5
15
k
Voltage feedback ratio
- VCE = 10 V, - IC = 1 mA,
f = 1 kHz
hre
0.1 x 10-4
8 x 10-4
Current gain - bandwidth
product
- VCE = 10 V, - IC = 20 mA,
f = 100 MHz
fT
200
MHz
Collector - base capacitance
- VCB = 10 V, f = 1.0 MHz, IE = 0
CCB
8.5
pF
Emitter - base capacitance
- VEB = 0.5 V, f = 1.0 MHz, IC = 0
CEB
30
pF
Small signal current gain
- VCE = 10 V, - IC = 1 mA,
f = 1 kHz
hfe
60
500
Output admittance
- VCE = 10 V, - IC = 1 mA,
f = 1 kHz
hoe
1.0
100
S
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
Delay time (see fig.1)
- IB1 = 15 mA, - IC = 150 mA,
- VCC = 30 V, - VEB = 2 V
td
15
ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4403 BULK | 制造商:MCC 功能描述:General Purpose PNP Through Hole Transistor TO-92 |
| 2N4403/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:General Purpose Transistors |
| 2N4403/E6 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 600MA I(C) | TO-226AA |
| 2N4403/E7 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 600MA I(C) | TO-226AA |
| 2N4403_07 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER |
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