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参数资料
| 型号： | 2N4409 |
| 厂商： | VISHAY SPRAGUE |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC, CASE CT, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 370K |
| 代理商： | 2N4409 |
2SD2030, 2SD2031
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SD2030
2SD2031
Unit
Collector to base voltage
V
CBO
160
200
V
Collector to emitter voltage
V
CEO
160
200
V
Emitter to base voltage
V
EBO
55V
Collector current
I
C
100
mA
Collector power dissipation
P
C
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
2SD2030 V
(BR)CBO
160
—
V
I
C = 10 A, IE = 0
2SD2031
200
Collector to emitter
breakdown voltage
2SD2030 V
(BR)CEO
160
—
V
I
C = 1 mA, RBE = ∞
2SD2031
200
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
VI
E = 10 A, IC = 0
Collector cutoff
current
2SD2030 I
CBO
——
10
AV
CB = 140 V, IE = 0
2SD2031
V
CB = 160 V, IE = 0
DC current transfer ratio
h
FE1*
1
60
—
200
V
CE = 5 V, IC = 10 mA
h
FE2
30
—
V
CE = 5 V, IC = 1 mA
Base to emitter voltage
V
BE
—
1.5
V
CE = 5 V, IC = 10 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
0.5
V
I
C = 30 mA, IB = 3 mA
Gain bandwidth product
f
T
—
140
—
MHz
V
CE = 5 V, IC = 10 mA
Collector output capacitance
C
ob
—
3.8
—
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Note:
1. The 2SD2030 and 2SD2031 are grouped by h
FE1 as follows.
Grade
B
C
h
FE1
60 to 120
100 to 200
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N440A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | TO-5 |
| 2N441 | 制造商:DELCO 功能描述: |
| 2N4410 | 功能描述:两极晶体管 - BJT NPN Low Lvl RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4410 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| 2N4410/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Amplifier Transistor NPN |
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