- 您现在的位置：买卖IC网 > PDF目录55780 > 2N4416DCSM (SEMELAB LTD) 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET PDF资料下载
参数资料
| 型号： | 2N4416DCSM |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | HERMETIC SEALED, CERAMIC, LCC2-6 |
| 文件页数： | 2/2页 |
| 文件大小： | 51K |
| 代理商： | 2N4416DCSM |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
mA
nA
pA
nA
pF
nV
√Hz
Document Number 3292
Issue 1
2N4416DCSM
LAB
SEME
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
VDS = 0V
IG = –1A
VDS = 15V
ID = 1nA
VDS = 15V
VGS = 0V
VGS = –15V
VDS = 0V
Tamb = 125°C
VDG = 10V
VGS = –10V
VDS = 10V
VGS = –6V
VGS = 0V
ID = 3mA
VGS = 0V
ID = 1mA
VGS = 0V
ID = 0mA
f = 1kHz
VDS = 15V
VGS = 0V
f = 1KHz
VDS = 15V
VGS =0V
f = 1MHz
VDG = 10V
VGS =0V
f = 1kHz
V(BR)GSS
Gate – Source Breakdown Voltage
VGSS(off)
Gate – Source Cut–off Voltage
IDSS*
Saturation Current
IGSS
Gate Reverse Current
ID(off)
Drain Cut–off Current
VDS(on)
Drain – Source On Voltage
RDS(on)
Drain – Source On Resistance
RDS(on)
Drain – Source On Resistance
CISS
Common – Source Input Capacitance
CRSS
Common – Source Reverse Transfer
Capacitance
en
Equivalent Input Noise Voltage
–30
–35
–3
–6
510
15
–1
–0.6
–200
100
2
0.25
0.4
150
2.2
0.7
6
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
* Pulse Test: PW
≤ 300 s Duty Cycle ≤ 30%
相关PDF资料 |
PDF描述 |
|---|---|
| 2N4440 | 1.5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-60 |
| 2N4440 | UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60 |
| 2N458A | 7 A, 45 V, PNP, Ge, POWER TRANSISTOR, TO-3 |
| 2N463 | 5 A, 60 V, PNP, Ge, POWER TRANSISTOR, TO-32 |
| 2N4897XR1 | 5000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4416-E3 | 功能描述:JFET 30V 5mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N4419 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 200MA I(C) | TO-92VAR |
| 2N442 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 15A I(C) | TO-36 |
| 2N4421 | 制造商:Texas Instruments 功能描述:Bipolar Junction Transistor, NPN Type, TO-92VAR |
| 2N4424 | 功能描述:两极晶体管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。