参数资料
型号: 2N4431
厂商: ADVANCED SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
文件页数: 1/1页
文件大小: 29K
代理商: 2N4431
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25
OC
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 3 mA
45
V
BVCER
IC = 20 mA
RBE = 10
45
V
BVEBO
IE = 3 mA
3.5
V
ICBO
VCE = 28 V
500
A
hFE
VCE = 5.0 V
IC = 100 mA
15
150
---
Ft
VCE = 20 V
IC = 100 mA
600
MHz
Cob
VCB = 28 V
f = 1.0 MHz
10
pF
PG
η
C
VCE = 28 V
POUT = 5.0 W
f = 1,000 MHz
6.0
40
7.0
50
dB
%
NPN SILICON RF POWER TRANSISTOR
2N4431
DESCRIPTION:
The ASI
2N4431 is Designed for
Class C Amplifier Applications Up to
1,000 MHz.
FEATURES:
P
G = 7.0 dB Typ. at 5.0 W/1000 MHz
Emitter Ballasting for Ruggedness
Omnigold Metallization System
MAXIMUM RATINGS
IC
2.0 A
VCB
45 V
PDISS
20 W @ TC = 25
OC
TJ
-65 to +200
OC
TSTG
-65 to +150
OC
θ
JC
8.8
OC/W
PACKAGE STYLE .280 4L STUD
ORDER CODE: ASI10805
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H
.245 / 6.22
.255 / 6.48
DIM
1.010 / 25.65
1.055 / 26.80
I
J
.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24
.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45°
A
#8-32 UNC
I
J
E
B
C
相关PDF资料
PDF描述
2N4440 UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-210AB
2N4445 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-46
2N4446 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-46
2N5432 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-52
2N4448 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-46
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