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参数资料
| 型号： | 2N4449UA |
| 厂商： | MICROSEMI CORP |
| 元件分类： | BIP General Purpose Small Signal |
| 英文描述： | 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SURFACE MOUNT PACKAGE-4 |
| 文件页数： | 1/2页 |
| 文件大小： | 27K |
| 代理商： | 2N4449UA |
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
2N2369A
2N4449
All UA
All UB
All U
Unit
Collector-Emitter Voltage
VCEO
15
20
15
Vdc
Emitter-Base Voltage
VEBO
4.5
6.0
4.5
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Collector-Emitter Voltage
VCES
40
Vdc
Total Power Dissipation @ TA = +25
0C
@ TC = +25
0C
PT
0.50
(1)
1.2
(2)
0.50
(1)
1.2
(2)
0.50
(5)
1.4
(7)
0.40
(6)
1.3
(8)
0.60
(
3
1.5
(4)
W
Operating & Storage Junction
Temperature Range
Top, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
2N2369A
2N4449
All UA
All UB
All U
Unit
Thermal Resistance, Junction-to-Case
R
θJC
146
125
135
117
0C/W
Thermal Resistance, Junction-to-Ambient
R
θJA
325
350
437
291
0C/W
1) Derate linearly 3.08 mW/
0C above T
A = +37.5
0C
5) Derate linearly 2.86 mW/
0C above T
C = +63.5
0C
2) Derate linearly 6.85 mW/
0C above T
C = +25
0C
6) Derate linearly 2.29 mW/
0C above T
C = +63.5
0C
3) Derate linearly 3.44 mW/
0C above T
A = +63.5
0C
7) Derate linearly 8.00 mW/
0C above T
C = +63.5
0C
4) Derate linearly 8.55 mW/
0C above T
C = +25
0C
8) Derate linearly 7.41 mW/
0C above T
C = +63.5
0C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
V(BR)CEO
15
Vdc
Collector-Emitter Cutoff Current
VCE = 20 Vdc
ICES
0.4
Adc
Emitter-Base Breakdown Voltage
VEB = 4.5
2N2369A, 2N4449
VEB = 4.0 Vdc
IEBO
10
0.25
Adc
Collector-Base Breakdown Voltage
VCB = 75 Vdc
VCB = 20 Vdc
ICBO
10
0.2
Adc
TECHNICAL DATA
2N2369A
2N4449
TO-18 (TO-206AA) TO-46 (TO-206AB)
2N2369A, U, UA, JAN, JTX, JTXV
2N2369AUB JAN, JTX, JTXV
2N4449, U, UA, JAN, JTX, JTXV
Processed per MIL-PRF-19500/317
NPN SWITCHING SILICON
TRANSISTORS
MIL-PRF
QML
DEVICES
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4449UB | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 20V 3PIN UB - Gel-pak, waffle pack, wafer, diced wafer on film |
| 2N444A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-5 |
| 2N445 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-5 |
| 2N4453 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 200MA I(C) | TO-46 |
| 2N445A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 18V V(BR)CEO | TO-5 |
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