参数资料
型号: 2N44
厂商: AMERICAN MICROSEMICONDUCTOR INC
元件分类: 小信号晶体管
英文描述: 300 mA, 30 V, PNP, Ge, SMALL SIGNAL TRANSISTOR
文件页数: 1/1页
文件大小: 239K
代理商: 2N44
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2N44 Information
Category Transistors
2N44 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 30
V(BR)CBO (V) : 45
I(C) Max. (A) : 300m
Absolute Max. Power Diss. (W) : 150m
Maxim um Operating Tem p (шC) : 85х
I(CBO) Max. (A) : 16u
@V(CBO) (V) (Test Condition) : 45
h(FE) Min. Current gain. : 13
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 100m
@V(CE) (V) (Test Condition) : 1.0
h(fe) Min. SS Current gain. : 13у
@I(C) (A) (Test Condition) : 100m
@V(CE) (V) (Test Condition) : 1.0
@Freq. (Hz) (Test Condition) :
f(T) Min. (Hz) Transition Freq : 1.0M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
C(obo) (Max) (F) : 60p
@V(CB) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Package Style : Can
Mounting Style : T
Description :
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相关代理商/技术参数
参数描述
2N440 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | TO-5
2N4400 功能描述:两极晶体管 - BJT TO-92 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4400/D 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistors NPN
2N4400_01 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier
2N4400_D74Z 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2