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参数资料
| 型号： | 2N4854 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CASE 654-07, 6 PIN |
| 文件页数： | 6/6页 |
| 文件大小： | 317K |
| 代理商： | 2N4854 |
2SA1871
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
without notice.
For actual design-in, refer to the latest publications of NEC's data sheets or data
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| 2N3823 | Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-72 |
| 2N3823 | Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-72 |
| 2N3838 | 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N3839 | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72 |
| 2N3710 | 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4854JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N4854JX | 制造商:MICROSEMI CORP-MASSACHUSE 功能描述: |
| 2N4854U | 功能描述:两极晶体管 - BJT NPN/PNP Transistor 6 Pin RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4854UJANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N4854UTX | 功能描述:TRANSISTR NPN/PNP 40V 600MA SMD RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402 |
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